Conferences
Invited Talks
34. T. Paskova, Epitaxial and Vapor Growth, 17th International Summer School for Crystal Growth, July 21-26, 2019, YMCA, CO, USA
33. T. Paskova, HVPE GaN and AlGaN Thin vs Thick Freestanding Films for Electronic and Optoelectronic Devices International Conference on Metallurgical Coatings and Thin Films, April 24-28, 2017 in San Diego, CA, USA
32. T. Paskova, Materials Science Research Opportunities with the Division of Materials Research, National Science Foundation, Conference on Organic Sensors and Bioelectronics IX, SPIE’2016 Meeting, San Diego, Aug. 28 – Sept. 1, CA
32. O. Romanyuk, P. Jiříček, I. Bartoš, S. Fernandez-Garrido, L. Geelhaar, O. Brandt, T. Paskova, Polarity of GaN surfaces and nanowires from X-ray photoelectron diffraction, Conference on Crystal Growth (3CG), Nov. 4-7, 2014, Phuket, Thailand
31. M. Slomski, J. Leach, J. Muth and T. Paskova
Status of HVPE grown GaN and AlGaN templates and bulk substrates: electrical and thermal conductivity
6th International Workshop on Crystal Growth Technology (IWCGT-6), June 15-19, 2014, Berlin, Germany
30. T. Paskova
Importance of HVPE-GaN polarity, doping and thermal conductivity for device growth
IW on Bulk Nitride Semiconductors VII (IWBNS), Sept. 30-Oct. 5, 2013, Kloster Seeon, Germany
29. T. Paskova
GaN substrates of various polarities vs sidewall epitaxy for nitride device growth
European Materials Research Society (E-MRS), May 27-30, 2013, Strasbourg, France
28. T. Paskova
HVPE boule growth of GaN conducting and insulating substrates of various polarities
4th International Symposium on Growth of III-Nitrides (ISGN4), July 16-19, 2012, St. Petersburg, Russia
27. T. Paskova
Advanced templates vs bulk nitride substrates for optoelectronic device applications
International Workshop on Solid State Lightening with Human Factors Technology (IWSSTHF), March 1-2, 2012, Chungli, Taoyuan, Taiwan
26. T. Paskova
Bulk nitride semiconductor materials
International Workshop on Nitride Semiconductors (IWN2010), Sept. 19-24, 2010, Tampa, FL
25. T. Paskova
Defects in GaN boule growth, polar and non-polar
2010 Gordon Research Conference: Defects in Semiconductors, August 8-13, 2010, Colby-Sawyer College, New London, NH
24. T. Paskova, D. Hanser, E. Preble, and K. R. Evans
Seeded HVPE growth of GaN substrates: advantages and challenges
IW on Bulk Nitride Semiconductors VI, Aug. 23-28, 2009, Iznota, Poland
23. T. Paskova, D. Hanser, E. Preble, and K. R. Evans
Advantages of HVPE-GaN substrates for growth of group III-Nitrides
IC on GaN Materials and Devices IV, OPTO, Photonic West 2009, Jan.24-29, 2009, San Jose, CA
22. B. Monemar, P. P. Paskov, G. R. Pozina, C. Hemmingsson, P. Bergman, D. Lindgren, L. Samuelson, X. Ni, H. Morkoç, T. Paskova, Z. Bi, and J. Ohlsson, Photoluminescence of Mg-doped m-plane GaN grown on bulk GaN templates
IC on GaN Materials and Devices IV, OPTO, Photonic West 2009, Jan.24-29, 2009, San Jose, CA
21. T. Paskova
HVPE grown GaN for substrate applications: obstacles and prospects
IW on Nitride semiconductors (IWN’2006), Focused Session on Bulk Crystals, Oct. 23-27, 2006, Kyoto, Japan
20. T. Paskova, B. Monemar, and D. Hommel
Thermally induced strain and bending in HVPE grown GaN films studied by HRXRD at variable temperatures
IW on Bulk Nitride Semiconductors IV, Oct. 17-22, 2006, Makino, Japan
19. T. Paskova, R. Kroeger, P.P. Paskov, S. Figge, D. Hommel, B. Monemar, B. Haskell, P. Fini, J. Speck, and S. Nakamura
Microscopic emission properties of nonpolar GaN grown by HVPE
IC on GaN Materials and Devices I, OPTO, Photonic West 2006, Jan.21-26, 2006, San Jose, CA
18. T. Paskova
Physical properties of HVPE grown GaN films
Workshop of North European Nitride Initiative, Sept.15, 2005, Institute of High Pressure Physics, Unipress, Warsaw, Poland.
17. T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmita, and B. Monemar
Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers
IW on Bulk Nitride Semiconductors III, Sept. 4-9, 2004, Zakopane, Poland
16. T. Paskova, E. Valcheva, V. Darakchieva, P.P. Paskov, B. Arnaudov, B. Monemar, J. Birch, M. Heuken, R.F. Davis, and P. Gibart
Growth, separation and properties of HVPE grown GaN by using different nucleation schemes
IW on Bulk Nitrides, June 2-3, 2003, Tokyo, Japan
15. T. Paskova, V. Darakchieva, P.P. Paskov, U. Södervall, and B. Monemar
Growth and separation related properties of HVPE-GaN free-standing films
IW on Bulk Nitride Semiconductors II; May 18 – 23, 2002, Amazonas, Brazil
14. T. Paskova and B. Monemar
HVPE growth and characterization of GaN films on sapphire with different buffers
4th Russian Workshop “Gallium, Aluminium and Indium Nitrides” (RWIII-N 4), Sept.18-19, 2000, St. Petersburg, Russia
13. C. Wetzel, T. Paskova, E. A. Preble, and T. Detchprohm
Progress in Homoepitaxial LED Growth on polar, nonpolar and semipolar bulk GaN substrates
International Workshop on Bulk Nitrides Semiconductors (IWBNS-7), March 15-20, 2011, Wakayama, Japan
12. B. Monemar, P. P. Paskov, G. R. Pozina, C. Hemmingsson, P. Bergman, D. Lindgren, L. Samuelson, X. Ni, H. Morkoç, T. Paskova, Z. Bi, and J. Ohlsson
Photoluminescence of Mg-doped m-plane GaN grown on bulk GaN templates
SPIE Photonic West, Feb 1-4, 2011, San Jose CA
11. D. Hanser, E. Preble, T. Paskova, and K. R. Evans
Polar and nonpolar bulk GaN grown by HVPE
IS on Growth of III-Nitrides (ISCN-2), July 6-9, 2008, Laforet Shuzenji, Japan
10. D. Hanser, E. Preble, L. Liu, T. Paskova, and K. R. Evans
Fabrication and characterization of native non-polar gaN substrates
5th IW on Bulk Nitride Semiconductors, Sept. 24-29, 2007, Bahia, Brazil
9. P.P. Paskov, T. Paskova, B. Monemar, S. Figge, D. Hommel, B. Haskell, P. Fini, J. Speck, and S. Nakamura
Optical properties of nonpolar a-plane GaN layers
E-MRS 2006 Spring Meeting, May 28 – June 2, Nice, France
8. B. Monemar, P.P. Paskov, J.P. Bergman, A.A. Toropov, T. Shubina, S. Figge, T. Paskova, D. Hommel, A. Usui, M. Iwaya, S. Kamiyama, H. Amano, and I. Akasaki
Optical signatures of dopants in GaN
11th International Conference on Defect Recognition, Imaging and Physics in Semiconductors, (DRIP-XI), Sept. 15-19, 2005, Beijing, China
7. B. Monemar, T. Paskova, C. Hemmigston, H. Larsson, P.P. Paskov, I.G. Ivanov, and A. Kasic
Growth of thick GaN layers by hydride vapour phase epitaxy
IW on Crystal Growth, Nov. 9-12, 2004, Korea
6. D. Hommel, C. Kruse, S. Figge, and T. Paskova
Epitaxial technologies for short wavelength optoelectronic devices
12th International Summer School on Crystal Growth, Aug. 1-7, 2004, Berlin, Germany
5. B. Monemar, P.P. Paskov, H. Haridizadeh, J.P. Bergman, E. Valcheva, V. Darakchieva, B. Arnaudov, T. Paskova, P.O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki
Optical investigations of AlGaN/GaN quantum wells and superlattices
IC on Photo-Responsive Materials, Feb. 25-29, 2004, Kariega, South Africa
4. O. Gelhausen, M.R. Phillips, E. M. Goldys,T. Paskova, B. Monemar, M. Strassburg, and A. Hoffman
Formation and dissociation of Hydrogen-related defect centers in Mg-doped GaN
Australian Conference on Microscopy and Microanalysis, Feb. 2-6, 2004, Geelong, Australia
3. B. Monemar, P.P. Paskov, T. Paskova, J.P. Bergman, G. Pozina, W.M. Chen, P.N. Hai, I. A. Buyanova, H. Amano, and I. Akasaki
Optical Characterisation of III-Nitrides
E-MRS 2001 Spring Meeting, June 5-8; 2001, Strasbourg, France
2. B. Monemar, P. P. Paskov, T. Paskova, G. Pozina, W. M. Chen, N. Q. Thinh, H. Amano, and I. Akasaki
Physics of III-Nitrides, from bulk to quantum structures
9th Nordic Semiconductor Meeting; May 23-20, 2001, Copenhagen, Denmark
1. B. Monemar, J.P. Bergman, G. Pozina, I.A. Buyanova, W.M. Chen, Mt. Wagner, and T. Paskova
Defects in Gallium Nitride
3rd IW on Materials Science (IWOMS’99), Nov. 2-4, 1999, Hanoi