Research

Research Interests

  • Crystal growth of III-V semiconductor compounds and alloys – GaN, AlGaN by HVPE for template and substrate applications
  • Crystal growth of III-V semiconductor compounds and alloys – AlN and AlGaN by magnetron sputtering for buffer applications.
  • Crystal growth of nitride based optoelectronic structures – InGaN/GaN by MOCVD
  • Crystal growth of Ga2O3 based device structures by PLD
  • Defect characterization in semiconductor materials. Relation between growth parameters and defect formation
  • Effect of doping on the defect formation and interaction with deep level defects in wide bandgap materials
  • Emission mechanisms in III-V semiconductor compounds and alloys
  • Strain effects in highly mismatched systems.
  • Material structure and defect redistribution under extreme condition treatment
  • Heterostructures and nanostructures based on III-V semiconductor systems: emission properties, phonon mode behavior, microstructure evolution, etc.
  • Understanding the growth-material properties-device performance relationship
  • Thermal transport and thermal management of nitride and oxide based device structures for power electronics
  • Surface engineering of nitrides for biosensing applications

Research Projects

  • IRES: Wide bandgap materials for energy and biosensing applications

          Sponsor: National Science Foundation (NSF)
Duration: August 2015 – July 2018
PI(s): Dr. Tania Paskova and Dr. Albena Ivanisevic

  • Development of Ga2O3 based structures for high power applications

          Sponsor: National Science Foundation (NSF)
Duration: August 2015 – July 2018
PI(s): Dr. Tania Paskova and Dr. John Muth

  • Thermal transport in AlGaN alloys: effect of structural and point defects

          Sponsor: National Science Foundation (NSF)
Duration: August 2013 – July 2016
PI(s): Dr. Tania Paskova and Dr. John Muth

  • III-Nitride LED structures on sidewall grown semipolar facets

          Sponsor: National Science Foundation (NSF)
Duration: July 2012 – June 2016
PI(s): Dr. Tania Paskova and Dr. John Muth

  • Characterization of high quality AlGaN epitaxial films grown by HVPE

          Sponsor: US Navy Research Office (DoD)
Duration: September 2012 – March 2013
PI(s): Dr. Salah Bedair and Dr. Tania Paskova