Research
Our Core Research
Semiconductor Materials & Devices
Developing cutting-edge devices utilizing a variety of semiconductor materials, including silicon, silicon germanium, gallium nitride, silicon carbide, and organic semiconductors. This includes the design, fabrication, and characterization of electronic, optoelectronic, and energy-related devices.
Advanced Materials
Investigations involve exploring and developing novel materials with unique properties, such as high-K dielectrics for improved device performance, metal gates for advanced transistor architectures, energy harvesting materials for wearable applications, and a range of sensing materials for chemical, light, and biological applications.
Fabrication Techniques
Expertise lies in advanced fabrication methods, including cleanroom processing, micro- and nano-patterning techniques to create intricate device structures, transistor processing for integrated circuits, and novel techniques like spin coating and electrospinning for the fabrication of flexible and functional materials.
Characterization & Analysis
A strong emphasis is placed on comprehensive characterization of materials and devices using a suite of advanced techniques, including materials characterization to understand fundamental properties, and electrical and optical characterization to assess device performance.
Diverse Device Development
Research spans a wide range of device types, including traditional electronic devices, emerging quantum devices, solar cells and photodiodes for energy conversion, and sensors for environmental and biomedical applications.
Completed Research Directions
- Si and SiGe based low power devices,
- High-K dielectrics, metal gates, junctions
- Organic Redox Molecules to augment silicon devices
- Wide Bandgap Power Devices: SiC devices and GaN Transparent oxide semiconductors for thin film transistors
Current Research Directions
- Si and SiGe based low power devices,
- High-K dielectrics, metal gates, junctions
- Organic Redox Molecules to augment silicon devices
- Wide Bandgap Power Devices: SiC devices and GaN Transparent oxide semiconductors for thin film transistors
Collaboration and Funding Opportunities
