Dolar Khachariya

Ph.D. Student

Contact Information
Office: MRC 327R
E-mail: dkhacha AT ncsu DOT edu
Mailing Address: 

Dept. of Electrical and Computer Engineering
Box 7914
North Carolina State University
Raleigh, NC 27695

Research
  • Wide bandgap power devices
  • Device Fabrication
  • Electrical Characterization
Education
  • M.Tech in Electrical Engineering, Indian Institute of Technology Bombay, India, 2015
  • B.Tech in Electronics & Communication Engineering, U. V. Patel College of Engineering, India, 2011
Publications

I. Journal Publications (Google Scholar)

  1. P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. H. Kim,  Y. Guan, D. Khachariya, A. Klump, S. Pavlidis, R. Kirste, R. Collazo, and Z. Sitar, “On the Ge shallow-to-deep level transition in Al-rich AlGaN,” Journal of Applied Physics, 130, 055702 (2021).
  2. D. Khachariya, D. Szymanski, M. H. Breckenridge, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, and S. Pavlidis, “On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers,”  Applied Physics Letters 118, 122103 (2021).
  3. M. H. Breckenridge, P. Bagheri, Q. Guo, B. Sarkar, D. Khachariya, S. Pavlidis, J.  Tweedie, R. Kirste, S. Mita, P. Reddy, R. Collazo, and Z. Sitar, “High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN,”  Applied Physics Letters 118, 112104 (2021). (Editor’s Pick)
  4. D. Khachariya, D. Szymanski, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, and S. Pavlidis, “(Invited) A Path Toward Vertical GaN Superjunction Devices,” ECS Transactions, 98 (6) 69-79 (2020). 
  5. D. Khachariya, D. Szymanski, R. Sengupta, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, and S. Pavlidis, “Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN,” Journal of Applied Physics, 128, 064501 (2020). 
  6. P. Reddy, D. Khachariya, D. Szymanski, M. H. Breckenridge, B. Sarkar, S. Pavlidis, R. Collazo, Z. Sitar, and E. Kohn, “Role of polarity in SiN on Al/GaN and the pathway to stable contacts,” Semicond. Sci. Technol. 35, 055007 (2020) 
  7. P. Reddy, M. H. Breckenridge, Q. Guo, A. Klump, D. Khachariya, S. Pavlidis, W. Mecouch, S. Mita, B. Moody, J. Tweedie, R. Kirste, E. Kohn, R. Collazo, and Z. Sitar, “High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates,“ Applied Physics Letters 116, 081101 (2020).  
  8. D. Khachariya, A. S. Kumar, M. Meer, S. Ganguly, and D. Saha, “Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires,“ Physica Status Solidi A: Applications and Material Science, vol. 214, no. 2, p. 1600620, 2016. (Selected as the February 2017 front cover page) 
  9. D. Banerjee, S. Sankaranarayanan, D. Khachariya, M. B. Nadar, S. Ganguly, and D. Saha, “Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires,” Applied Physics Letters, vol. 109, no. 3, p. 031111, 2016.  
  10. K. Takhar, A Kumar S, M. Meer, B. Upadhyay, D. Khachariya, P. Upadhyay, S. Ganguly, and D. Saha, “Source Extension Region Scaling for AlGaN/GaN High Electron Mobility Transistors using non-alloyed Ohmic Contacts,” Solid State Electronics, vol. 122, p. 70-74, 2016. (Editor’s choice paper) 
  11. D. Banerjee, K. Takhar, S. Sankaranarayanan, P. Upadhyay, R. Ruia, S. Chouksey, D. Khachariya, S. Ganguly, and D. Saha, “Electrically injected ultra-low threshold room temperature InGaN/GaN-based lateral triangular nanowire laser,” Applied Physics Letters, vol. 107, no. 10, p. 101108, 2015. 
  12. K. Takhar, M. Meer, D. Khachariya, S. Ganguly, and D. Saha, “Observation of quantum oscillation of work function in ultrathin-metal/semiconductor junctions,” J. Vac. Sci. Technol. A, vol. 33, no. 5, p. 05E126, 2015. 
  13. P. Upadhyay, M. Meer, K. Takhar, D. Khachariya, A. Kumar S, D. Banerjee, S. Ganguly, A. Laha, and D. Saha, “Improved Ohmic contact to GaN and AlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation,” Physica Status Solidi (b), vol. 252, no. 5, p. 989-995, 2015. 

II. Conference Presentations

  1. D. Khachariya, D. Szymanski, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, and S. Pavlidis, “Schottky Contacts to N-polar GaN with SiN Interlayers with Higher Temperature Operation Capability,” Lester Eastman Conference on High Performance Devices (LEC 2021), Notre Dame, Indiana, August 2-4, 2021.
  2. S. Stein, D. Khachariya, and S. Pavlidis, “Performance Analysis of GaN Vertical JFETs with Ion-Implanted Gates,” Lester Eastman Conference on High Performance Devices (LEC 2021), Notre Dame, Indiana, August 2-4, 2021.
  3. D. Szymanski, D. Khachariya, A. Klump, K. Wang, Y. Guan, P. Reddy, S. Mita, R. Kirste, S. Pavlidis, E. Kohn, R. Collazo, and Z. Sitar, “Development of III-Nitride Superjunctions,“ 22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22), Virtual, August 2-4, 2021.

  4. P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. H. Kim, Y. Guan, D. Khachariya, S. Pavlidis, R. Kirste, R. Collazo, and Z. Sitar, “Direct evidence of Ge becoming a deep donor instead of a DX- in Al rich AlGaN,“ 22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22), Virtual, August 2-4, 2021.

  5. S. Rathkanthiwar, P. Bagheri, D. Khachariya, J. H. Kim, S. Mita, P. Reddy, J. Tweedie, Z. Sitar, and R. Collazo, “Si doped homoepitaxial GaN drift layers on single crystal GaN with very low carbon grown by metalorganic chemical vapor deposition,“ 22nd American Conference on Crystal Growth and Epitaxy (ACCGE-22), Virtual, August 2-4, 2021.
  6. D. Khachariya, S. Mita, P. Reddy, S. Dangi, P. Bagheri, M. H. Breckenridge, R. Sengupta, E. Kohn, Z. Sitar, R. Collazo, and S. Pavlidis, “Al0.85Ga0.15N/Al0.6Ga0.4N High Electron Mobility Transistors on Native AlN Substrates with >9 MV/cm Mesa Breakdown Fields,“ 2021 79th Device Research Conference (DRC), Virtual, June 20-23, 2021.
  7. D. Szymanski, D. Khachariya, A. Klump, K. Wang, Y. Guan, P. Reddy, S. Mita, R. Kirste, S. Pavlidis, E. Kohn, R. Collazo, and Z. Sitar, “Development of III-Nitride Superjunctions,“ 63rd Electronic Materials Conference (EMC), Virtual, June 23-25, 2021.
  8. S. Rathkanthiwar, P. Bagheri, D. Khachariya, J. H. Kim, S. Mita, P. Reddy, J. Tweedie, Z. Sitar, and R. Collazo, “Point-defect management in homo-epitaxially grown Si-doped GaN by MOCVD for vertical power devices,“ 63rd Electronic Materials Conference (EMC), Virtual, June 23-25, 2021.

  9. P. Bagheri, P. Reddy, S. Mita, D. Szymanski, J. H. Kim, Y. Guan, D. Khachariya, S. Pavlidis, R. Kirste, R. Collazo, and Z. Sitar, “Direct evidence of Ge becoming a deep donor instead of a DX- in Al rich AlGaN,“ 63rd Electronic Materials Conference (EMC), Virtual, June 23-25, 2021.

  10. A. Chang, D. Szymanski, D. Khachariya, J. Tweedie, P. Reddy, Z. Sitar, R. Collazo, S. Pavlidis, and L. Lauhon, “Oxygen doping distribution in GaN lateral polarity junction,“ 63rd Electronic Materials Conference (EMC), Virtual, June 23-25, 2021.
  11. Y. Guan, S. Washiyama, D. Khachariya, P. Bagheri, J. H. Kim, P. Reddy, Ramon Collazo, and Z. Sitar, “Influence of Chemical Potentials on Strain Development in Si-Doped Al0.7Ga0.3N,“ 2021 MRS Spring Meeting & Exhibit, Virtual, April 17-23, 2021.
  12. D. Khachariya, M. H. Breckenridge, W. Kim, A. Klump, K. Wang, S. Mita, J. Tweedie, S. Stein, P. Reddy, M. Bockowski, Z. Sitar, R. Collazo, and S. Pavlidis, “1 kV GaN-on-GaN PN Diode using Mg Implantation,“ 2020 78th Device Research Conference (DRC), Virtual, June 21-24, 2020.
  13. D. Khachariya, D. Szymanski, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, and S. Pavlidis, “Electrical Characterization of N-Polar GaN PN Diodes Grown by MOCVD,“ 13th International Conference on Nitride Semiconductors, Bellevue, Washington, July 7-12, 2019.
  14. D. Szymanski, D. Khachariya, K. Wang, A. Klump, S. Mita, P. Reddy, S. Pavlidis, R. Collazo, and Z. Sitar, “Point Defect Reduction in Smooth P-Type N-Polar GaN Grown via MOCVD,“ 13th International Conference on Nitride Semiconductors, Bellevue, Washington, July 7-12, 2019.
  15. D. Khachariya, D. Szymanski, B. Sarkar, P. Reddy, M. Robbins, E. Kohn, L. Lunardi, Z. Sitar, R. Collazo, and S. Pavlidis, “Chemical Treatment Effects on Schottky Contacts to MOCVD N-polar GaN,“ International Workshop on Nitride Semiconductors, Kanazawa, Japan, November 11-16, 2018.
  16. A. S. Kumar, D. Khachariya, K. Takhar, S. Ganguly, and D. Saha, “Lateral 1-D Transistors on AlGaN/GaN Heterostructure with Non-Contacting Side Gate,” E-MRS 2017 Fall Meeting, Warsaw, Poland, September 18 – 21, 2017.
  17. K. Takhar, A. Kumar S, M. Meer, B. B. Upadhyaya, P. Upadhyay, D. Khachariya, S. Ganguly, and D. Saha, “Non-Alloyed Ohmic Contacts to AlGaN/GaN High Electron Mobility Transistors for Better Scalability of Source Extension Region,” International Workshop on Nitride Semiconductors, Orlando, Florida, October 2-7, 2016.
  18. D. Khachariya, K. Takhar, P. Upadhyay, and D. Saha, “AlGaN/GaN 1-D Channel for High Electron Mobility Transistors,“ International Workshop on Nitride Semiconductors, Wroclaw, Poland, August 24-29, 2014.
  19. P. Upadhyay, D. Khachariya, K. Takhar, M. Meer, A. Kumar, and D. Saha, “Improved Ohmic Contact to Gallium Nitride using Trap Assisted Tunneling,” International Workshop on Nitride Semiconductors, Wroclaw, Poland, August 24-29, 2014.

 

Biography

Dolar Khachariya received his B.Tech. in Electronics & Communication Engineering in 2011 from the U. V. Patel College of Engineering, his M.Tech. degree in Electrical Engineering from Indian Institute of Technology Bombay in 2015 and is currently working towards his Ph.D. degree. His research is focused on design, simulation, fabrication, and testing of wide bandgap power devices.