Woong-Sun Kim, PhD

Post-Doctoral Researcher

Contact Information
Office: MRC 322E
E-mail: wkim8 AT ncsu DOT edu
Mailing Address: 

Dept. of Electrical and Computer Engineering
Box 7914
North Carolina State University
Raleigh, NC 27695

Research areas and skills
  • Knowledge of semiconductor device physics, vacuum technology and material science
  • Design of WBG power semiconductor devices especially in SiC MOSFETs and GaN HEMTs
  • Fabrication technologies of wide band-gap materials (SiC and GaN)
  • Electrical data analysis skills using high power measurement system
  • Cross-site development activities working with GaN & SiC epi providers
Education
  • Ph.D., Materials & Science Engineering Department, Hanyang University, Seoul, South Korea (~2012)
  • M.S., Materials & Science Engineering Department, Hanyang University, Seoul, South Korea (~2008)
  • B.S., Materials & Science Engineering Department, Hanyang University, Seoul, South Korea (1999~2006)
Awards
Publications

Papers

  • WS Kim, SY Shin, SH Lee, DS Han, JW Park, “High stability of amorphous hafnium–zinc–tin oxide thin film transistors”, Current Applied Physics 12, S17-S20, 2012

  • DS Han, YK Moon, S Lee, KT Kim, DY Moon, SH Lee, WS Kim, JW Park, “Phosphorus Doping Effect in a Zinc Oxide Channel Layer to Improve the Performance of Oxide Thin-Film Transistors”, Journal of electronic materials 41 (9), 2380-2386, 2012

  • SY Shin, YK Moon, WS Kim, SH Lee, JW Park, “Characterization of the SnO2 Based Thin Film Transistors with Ga, In and Hf Doping”, Journal of nanoscience and nanotechnology 12 (7), 5459-5463, 2012

  • YK Moon, WS Kim, KT Kim, SY Shin, JW Park, “Characteristics of Tin Oxide-Based Thin Film Transistors Prepared by DC Magnetron Sputtering”, Journal of nanoscience and nanotechnology 12 (4), 3341-3345, 2012

  • TS Kwon, DY Moon, YK Moon, WS Kim, JW Park, “Al2O3/TiO2 multilayer passivation layers grown at low temperature for flexible organic devices”, Journal of nanoscience and nanotechnology 12 (4), 3696-3700, 2012

  • DY Moon, WS Kim, JW Park, “Effects of NH3 Plasma Pre-Treatment of Ta Substrate on Atomic Layer Deposition of Cu Thin Film”, Journal of nanoscience and nanotechnology 12 (4), 3661-3664, 2012

  • WS Kim, SY Shin, JW Park, “The influence of moisture barrier films in ZnO-based thin film transistors”, Journal of the Electrochemical Society 159 (4), H353-H357, 2012            

  • WS Kim, YK Moon, KT Kim, SY Shin, JW Park, “Improvement in the bias stability of tin oxide thin-film transistors by hafnium doping”, Thin Solid Films 520 (6), 2220-2223, 2012

  • WS Kim, YK Moon, KT Kim, SY Shin, JW Park, “Improvement in the bias stability of zinc oxide thin-film transistors using Si3N4 insulator with SiO2 interlayer”, Thin Solid Films 520 (1), 578-581, 2011       

  • WS Kim, YK Moon, KT Kim, SY Shin, B Du Ahn, JH Lee, JW Park, “Improvement in the negative bias temperature stability of ZnO based thin film transistors by Hf and Sn doping”, Thin Solid Films 519 (20), 6849-6852, 2011

  • WS Kim, YK Moon, KT Kim, SY Shin, B Du Ahn, JH Lee, JW Park, “The influence of hafnium doping on bias stability in zinc oxide thin film transistors”, Thin Solid Films 519 (15), 5161-5164, 2011           

  • YK Moon, S Lee, WS Kim, BW Kang, JW Park, “IMPACT OF LANTHANUM HAFNIUM OXIDE AS A GATE INSULATOR ON THE PERFORMANCE OF ZINC OXIDE THIN FILM TRANSISTORS”, Journal of Ceramic Processing Research 11 (6), 665-668, 2010

  • WS Kim, BW Kang, JW Park, “Electrical characteristics of HfO2/La2O3/HfO2 films deposited by ECR-ALD”, Journal of Ceramic Processing Research 11 (5), 598-601, 2010

  • WS Kim, YK Moon, KT Kim, SY Shin, B Du Ahn, JH Lee, JW Park, “The influence of the hafnium doping on negative bias stability in zinc oxide thin film transistor”, Electrochemical and Solid-State Letters 13 (9), H295-H297, 2010      

  • WS Kim, YK Moon, S Lee, BW Kang, KT Kim, JH Lee, JH Kim, BD Ahn, JW Park, “Amorphous indium gallium zinc oxide semiconductor thin film transistors using O2 plasma treatment on the SiNX gate insulator”, Japanese Journal of Applied Physics 49 (8S1), 08JF02, 2010

  • BW Kang, WS Kim, CM Hwang, DY Moon, JJ Kim, JG Park, JW Park, “Titanium Oxide Thin Films Prepared by Plasma Enhanced Atomic Layer Deposition Using Remote Electron Cyclotron Resonance Plasma for Organic Devices Passivation”, Japanese Journal of Applied Physics 49 (8S1), 08JG05, 2010

  • DY Moon, TS Kwon, BW Kang, WS Kim, BM Kim, JH Kim, JW Park, “Copper seed layer using atomic layer deposition for Cu interconnect”, Nanoelectronics Conference (INEC), 2010 3rd International, 450-451, 2010

  • TS Kwon, YK Moon, WS Kim, DY Moon, KT Kim, SY Shin, DS Han, JG Park, JW Park, “Water Vapor Permeation Properties of Al2O3/TiO2 Passivation Layer Deposited by Atomic Layer Deposition”, Journal of the Korean Vacuum Society 19 (6), 495-500, 2010

  • WS Kim, SK Park, DY Moon, BW Kang, HD Kim, JW Park, “Characteristics of La_2O_3 Thin Films Deposited Using the ECR Atomic Layer Deposition Method”, Journal of Korean Physical Society 55, 590, 2009

  • YK Moon, S Lee, WS Kim, BW Kang, CO Jeong, DH Lee, JW Park, “Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an  plasma-treated insulator”, Applied Physics Letters 95 (1), 013507, 2009

  • WS Kim, DY Moon, BW Kang, JW Park, JG Park, “Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices”, Journal of Korean Physical Society 55, 55, 2009

  • WS Kim, SK Park, DY Moon, BW Kang, HD Kim, JW Park, “Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films”, Thin Solid Films 517 (14), 3900-3903, 2009

  • WS Kim, SK Park, DY Moon, TS Kim, BW Kang, JK Seo, HD Kim, JW Park, “Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films”,Journal of Korean Physical Society 53, 3334, 2008

  • WS Kim, MG Ko, TS Kim, SK Park, YK Moon, SH Lee, JG Park, JW Park, “Titanium dioxide thin films deposited by plasma enhanced atomic layer deposition for OLED passivation”, Journal of nanoscience and nanotechnology 8 (9), 4726-4729, 2008

  • WS Kim, TS Kim, BW Kang, MG Ko, SK Park, JW Park, “Characteristics of lanthanum hafnium oxide deposited by electron cyclotron resonance atomic layer deposition”, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 26 (4) 1588-1591, 2008

  • YK Moon, SH Kim, DY Moon, WS Kim, JW Park, “Enhancement of the Electrical Properties of GZO Thin Films on Polycarbonate Substrates by Using a TiO2 Buffer Layer”, Journal of Korean Physical Society 51, 1732, 2007

Conference papers

  • MK Eo, HS Choi, SY Jang, WS Kim, JH Shin, TH Jang, HI Kwon, “Effects of p-GaN Capping Layer on the Current Collapse Behaviors in Normally-off p-GaN Gate AlGaN/GaN HFETs”, Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, Fukuoka, 2013, pp942-943

  • YS Eum, WS Kim, JH Park, EJ Hwang, KC Kim, TH Jang, “The investigation of p-GaN gate HFET on 6-inch silicon using AlN interlayer”, Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, Kyoto, 2012, pp921-922

  • SM Cho, EJ Hwang, JM Kim, JH Kim, JH Shin, YS Eum, JH Park, YJ Jo, WS Kim, HJ Lee, KC Kim, TH Jang, “Low Leakage Current for 1.6kV Breakdown GaN HFET with 6um-thick Semi-insulating GaN on 6-inch Si”, Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, Kyoto, pp877-878

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