D. Khachariya, D. Szymanski, R. Sengupta, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, and S. Pavlidis, “Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN,” Journal of Applied Physics, vol. 128, no. 6, p. 064501, Aug. 2020, doi: 10.1063/5.0015140.
P. Reddy, M. Hayden Breckenridge, Q. Guo, A. Klump, D. Khachariya, S. Pavlidis, W. Mecouch, S. Mita, B. Moody, J. Tweedie, R. Kirste, E. Kohn, R. Collazo, and Z. Sitar, “High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates,” Appl. Phys. Lett., vol. 116, no. 8, p. 081101, Feb. 2020, doi: 10.1063/1.5138127.
P. Reddy, D. Khachariya, D. Szymanski, M. H. Breckenridge, B. Sarkar, S. Pavlidis, R. Collazo, Z. Sitar, and E. Kohn, “Role of polarity in SiN on Al/GaN and the pathway to stable contacts,” Semicond. Sci. Technol., vol. 35, no. 5, p. 055007, May 2020, doi: 10.1088/1361-6641/ab7775.
I. Song, M. K. Cho, Z. E. Fleetwood, Y. Gong, S. Pavlidis, S. P. Buchner, D. McMorrow, P. Paki, M. Kaynak, J. D. Cressler, “p-n-p-Based RF Switches for the Mitigation of Single-Event Transients in a Complementary SiGe BiCMOS Platform,” IEEE Transactions on Nuclear Science, vol. 65, no. 1, pp. 391-398, 2018.
M. K. Cho, I. Song, S. Pavlidis, Z. E. Fleetwood, S. P. Buchner, D. McMorrow, P. Paki, J. D. Cressler, “An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology,” IEEE Transactions on Nuclear Science, vol. 65, no. 1, pp. 426-431, 2018.
M.-Y. Tsai, N. Creedon, E. Brightbill, S. Pavlidis, B. Brown, D. W. Gray, et al., “Direct Correlation between Potentiometric and Impedance Biosensing of Antibody-Antigen Interactions using an Integrated System,” Applied Physics Letters, vol. 111, no. 7, p. 073701, 2017.
M.-g. Kim, H. Alrowais, S. Pavlidis, and O. Brand, “Size-Scalable and High-Density Liquid-Metal-Based Soft Electronic Passive Components and Circuits Using Soft Lithography,” Advanced Functional Materials, vol. 27, p. 1604466, 2017.
G. Pavlidis, S. Pavlidis, E. R. Heller, E. A. Moore, R. Vetury, and S. Graham, “Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry,” IEEE Transactions on Electron Devices, vol. 64, pp. 78-83, 2017.
S. Pavlidis, B. Bayraktaroglu, K. Leedy, W. Henderson, E. Vogel, and O. Brand, “ALD TiOx as a top-gate dielectric and passivation layer for InGaZnO115 ISFETs,” Semiconductor Science and Technology, vol. 32, no. 11, p. 114004, 2017.
S. Pavlidis, G. Alexopoulos, A. Ç. Ulusoy, M. K. Cho, and J. Papapolymerou, “Encapsulated Organic Package Technology for Wideband Integration of Heterogeneous MMICs,” IEEE Transactions on Microwave Theory and Techniques, vol. 65, pp. 438-448, 2017.
II. Refereed Conference Publications with Proceedings
D. Khachariya, D. Syzmanski, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, and S. Pavlidis, (Invited) “A Path Toward Vertical GaN Superjunction Devices,” in ECS Transactions, In Press, 2020.
S. Pavlidis, M.-Y. Tsai, D. Jin, B. Brown, J.-D. Velilla, M. DeFranks, and E. Vogel, “Mattress-Based Sweat Monitoring for Human Health Monitoring and Smart Homes,” in Hilton Head Workshop for Solid-State Sensors, Actuators and Microsystems, Hilton Head, SC, USA, 2018, pp. 299–302, doi: 10.31438/trf.hh2018.85.
S. Pavlidis, B. Wright, and J. Papapolymerou, “3-D printed substrates for MMIC packaging,” in 2017 IEEE Radio and Wireless Symposium (RWS), 2017, pp. 79-82.
Y. He, S. Pavlidis, W. Y. Chen, E. Drew, Z. J. Zhang, and J. Papapolymerou, “Fabrication and characterization of CPW transmission lines with CoFe2O4 nanomagnetic thin films,” in IEEE Radio and Wireless Symposium (RWS), Phoenix, AZ, USA, 2017, pp. 72-75.
S. Li, M. Yi, S. Pavlidis, H. Yu, M. Swaminathan, and J. Papapolymerou, “Investigation of surface roughness effects for D-band SIW transmission lines on LCP substrate,” in IEEE Radio and Wireless Symposium (RWS), Phoenix, AZ, USA, 2017, pp. 121-124.
C. Kim, S. Pavlidis, M. g. Kim, O. Brand, and H. Chen, “Room temperature CO2 detection using interdigitated capacitors with heteropolysiloxane sensing films,” in IEEE SENSORS, Orlando, FL, USA 2016.
S. Pavlidis, A. C. Ulusoy, and J. Papapolymerou, “A 5.4W X-Band Gallium Nitride (GaN) Power Amplifier in an Encapsulated Organic Package”, in European Microwave Conference (EuMC), Paris, France, September 2015.
S. Pavlidis, P. Getz, J. Hagen, N. Kelley-Loughnane, B. Bayraktaroglu, and O. Brand, “Investigating thin film passivations for IGZO dual gate pH sensors fabricated at low temperature,” in International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), Anchorage, AK, 2015, pp. 1334-1337.
A. C. Ulusoy, C. Barisich, S. Pavlidis, W. T. Khan, and J. Papapolymerou, “An ultra-wideband, hybrid, distributed power amplifier using flip-chip bonded GaN devices on AlN substrate,” in European Microwave Conference (EuMC), Rome, 2014, pp. 1285-1288.
F. Cai, S. Pavlidis, J. Papapolymerou, C. Yung Hang, W. Kahn, C. Zhang, et al., “Aerosol jet printing for 3-D multilayer passive microwave circuitry,” in 44th European Microwave Conference (EuMC), Rome, 2014, pp. 512-515.
S. Pavlidis, A. C. Ulusoy, W. T. Khan, and J. Papapolymerou, “A low-cost, encapsulated flip-chip package on organic substrate for wideband gallium nitride (GaN) hybrid amplifiers,” in IEEE MTT-S International Microwave Symposium (IMS), Tampa, FL, 2014.
C. Fan, C. Yung-hang, W. Kan, W. T. Khan, S. Pavlidis, and J. Papapolymerou, “High resolution aerosol jet printing of D- band printed transmission lines on flexible LCP substrate,” in IEEE MTT-S International Microwave Symposium (IMS), Tampa, FL, 2014.
S. Pavlidis, A. C. Ulusoy, W. T. Khan, O. L. Chlieh, E. Gebara, and J. Papapolymerou, “A feasibility study of flip-chip packaged gallium nitride HEMTs on organic substrates for wideband RF amplifier applications,” in IEEE 64th Electronic Components and Technology Conference (ECTC), Orlando, FL, 2014, pp. 2293-2298.
G. C. Barisich, S. Pavlidis, C. A. D. Morcillo, O. L. Chlieh, J. Papapolymerou, and E. Gebara, “An X-band GaN HEMT hybrid power amplifier with low-loss Wilkinson division on AlN substrate,” in IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems (COMCAS), Tel Aviv, 2013.
O. L. Chlieh, C. A. D. Morcillo, S. Pavlidis, W. T. Khan, and J. Papapolymerou, “Integrated microfluidic cooling for GaN devices on multilayer organic LCP substrate,” in IEEE MTT-S International Microwave Symposium Digest (IMS), Seattle, WA, 2013.
S. Pavlidis, C. A. D. Morcillo, P. Song, W. T. Khan, R. Fitch, J. Gillespie, et al., “A hybrid GaN/organic X-band transmitter module,” in IEEE Radio and Wireless Symposium (RWS), Austin, TX, 2013, pp. 241-243.
S. Pavlidis, J-J. Su, L. A. Beardslee, O. Brand, J. A. Hagen, N. Kelley-Loughnane, et al., “Pulsed operation of InGaZnO TFTs for VOC sensing applications,” in IEEE Sensors, Taipei, 2012.
L. A. Beardslee, S. Truax, J. H. Lee, S. Pavlidis, P. Hesketh, K. M. Hansen, R. Kramer, and O. Brand, “Selectivity enhancement strategy for cantilever-based gas-phase VOC sensors through use of peptide-functionalized carbon nanotubes,” in IEEE 24th International Conference on Micro Electro Mechanical Systems (MEMS), Jan. 2011, pp. 964–967.
III. Conferene/Workshop Presentations without Proceedings
D. Khachariya, M. H. Breckenridge, W. Kim, A. Klump, K. Wang, S. Mita, J. Tweedie, S. Stein, P. Reddy, M. Bockowski, Z. Sitar, R. Collazo, and S. Pavlidis, “1 kV GaN-on-GaN PN Diode using Mg Implantation,” presented at the IEEE Device Research Conference (DRC), Virtual, 2020.
D. Szymanski, D. Khachariya, K. Wang, A. Klump, S. Mita, P. Reddy, S. Pavlidis, R. Collazo, and Z. Sitar, “Point Defect Reduction in Smooth P-Type N-Polar GaN Grown via MOCVD,” 13th International Conference on Nitride Semiconductors, Bellevue, Washington, July 7-12, 2019.
D. Khachariya, D. Szymanski, P. Reddy, E. Kohn, Z. Sitar, R. Collazo, and S. Pavlidis, “Electrical Characterization of N-polar GaN PN Diodes Grown by MOCVD,” presented at the International Conference on Nitride Semiconductors, Bellevue, WA, USA, 2019.
D. Khachariya, D. Szymanski, B. Sarkar, R. Pramod, M. Robbins, E. Kohn, L. Lunardi, Z. Sitar, R. Collazo, and S. Pavlidis, “Chemical Treatment Effects on Schottky Contacts to MOCVD N-polar GaN,” presented at the International Workshop on Nitride Semiconductors, Kanazawa, Japan, 2018.
S. Pavlidis, E.M. Vogel, (Invited) “Towards Low-Voltage Electronic Devices using 2D-TMD Vertical Heterostructures” at EU-US Workshop on 2D Materials, Arlington, VA, USA, Oct. 23-25, 2017.
S. Pavlidis, A.C. Ulusoy, J. Papapolymerou, “High-Power Operation of an Encapsulated Flip-Chip Package on Organic Substrate for Gallium Nitride (GaN) Hybrid Amplifiers”, at Government Microcircuit Applications and Critical Technology (GOMACTech) Conference, St. Louis, MO, USA, March 23-26, 2015.
