Publications
Books
Nitrides with nonpolar surfaces: growth, properties and devices
Wiley-VCH, Berlin, 2008, Ed. T. Paskova
(ISBM: 978-3-527-40768-2)
Vacuum science and technology – nitrides as seen by the technology
Research Signpost, 2002, Eds. T. Paskova and B. Monemar
(ISBN: 81-7736-198-8)
Book Chapters and Review Papers
15. M. Slomski, L. Liu, J. Muth and T. Paskova, Growth technology for GaN, AlN bulk substrates and templates, Book chapter In: Wengang Bi, (ed.), Handbook of GaN Semiconductor Materials and Devices, Taylor & Francis 2017, Chapter 5, pp.139-163.
14. O. Romanyuk, P. Jiricek, T. Paskova, and I. Bartos,, Polarity of GaN surfaces with polar {0001} and semipolar {10-11}, {10-21}, {11-22} orientations: X-ray photoelectron diffraction study, Review paper In: J. Redwing, T. Paskova, Z. Lences and R.-J. Xie (eds.), Journal Materials Research, Focus Issue on Nitrides and Oxynitride Materials 30 (2015), 2881-2892.
13. B. L. Pearce, S. Wilkins, T. Paskova, and A. Ivanisevic, A review of in-situ surface functionalization of gallium nitride via beaker chemistry, Review paper In: J. Redwing, T. Paskova, Z. Lences and R.-J. Xie (eds.), Journal Materials Research, Focus Issue on Nitrides and Oxynitride Materials 30 (2015), 2859-2870.
12. M. Bickermann and T. Paskova, Vapor transport growth of wide bandgap materials, Book chapter In: T. Nishinaga and P. Rudolph (eds.), Handbook of Crystal Growth – Vol. II: Bulk Crystal Growth, (Amsterdam: Elsevier 2015) pp. 621–69.
11. B. Feigelson and T. Paskova, Growth of bulk GaN crystals, Book chapter In: P. Bhattacharya, R. Fornari and H. Kamimura (eds.), Comprehensive Semiconductor Science and Technology, volume 3 (Amsterdam: Elsevier 2011) p.232-281.
10. T. Paskova, D. Hanser, and Keith Evans, GaN substrates for III-Nitride Devices, Review paper for Special Issue on GaN and ZnO-based Devices in Proc. IEEE 97 (2010) p.1324.
9. T. Paskova and Keith Evans, GaN substrates – progress, status and prospects, Review paper for Special Issue on Solid State Lightening in IEEE Journal of Selected Topics in Quantum Electronics 15 (2009) p.1041.
8. T. Paskova, Development and prospects of nitride materials and devices with nonpolar surfaces, Feature paper in Phys. Stat. Sol. (b) 245 (2008) p.1011-1025.
7. T. Paskova, Nitride materials and devices with nonpolar surfaces: development and prospect, Book Chapter In: T. Paskova (ed.), ‘Nitrides with nonpolar surfaces: growth, properties and devices’, (Wiley-VCH, 2008), p.3-29.
6. V. Darakchieva, T. Paskova, and M. Schubert, Optical phonons in a-plane GaN under anisotropic strain, Book Chapter In: T. Paskova (ed.), ‘Nitrides with nonpolar surfaces: growth, properties and devices’, (Wiley-VCH, 2008), p.219-253.
5. S. Figge, C. Kruse, T. Paskova, and D. Hommel, Epitaxial technologies for short wavelength optoelectronic devices, Book Chapter In: G. Muler, J.-J. Metois, P. Rudolph (eds.), ‘Crystal Growth – from Fundamentals to Technology’, (Elsevier, 2004), p.295-318.
4. T. Paskova, E. Valcheva, and B. Monemar, Thick GaN films grown on sapphire: defects in highly mismatched systems, Review paper in Defect and Diffusion Forum 200-202 (2002) p.1-28.
3. T. Paskova and B. Monemar , Hydride vapour phase epitaxy growth of thick GaN layers Book Chapter In: O. Manasreh (ed.), ‘III-Nitride Semiconductors: Growth’, (Taylor & Francis Group, NY, 2003), p.175-236.
2. T. Paskova and B. Monemar , III-Nitride growth: past, present and future, Book Chapter In: T. Paskova and B. Monemar (eds.), ‘Nitrides as seen by the technology’, (Research Signpost, 2002), p.1-16.
1. T. Paskova and B. Monemar , HVPE-GaN quasi-substrates for nitride device structures, Book Chapter In: B. Gil (ed.), ‘Low Dimensional Nitride Semiconductors’, (Oxford University Press, 2002), p.79-104.
Journal Papers
2020:
263. N. Blumenschein, C. Kadlec, O. Romanyuk, J. Muth, T. Paskova, and F. Kadlec, Dielectric and Conducting Properties of Unintentionally and Sn-doped Ga2O3 studied by Terahertz Spectroscopy, Journal of Applied Physics 127 (2020) 165702.
262. D.Q. Tran, N. Blumenschein, A. Mock, P. Sukkaew, H. Zhang, J.F. Muth, T. Paskova, P.P. Paskov, and V. Darakchieva, Thermal conductivity of ultra-wide bandgap thin layers: high-Al-content AlGaN and b-Ga2O3 , Physica B 579 (2020) 411810.
2019:
261. N. Blumenschein, N. A. Moser, E. R. Heller, N. Miller, A. J. Green, A. Popp, A. Crespo, K. Leedy, M. Lindquist, T. Moule, E. Mercado, M. Singh, J. W. Pomeroy, M. Kuball, G. Wagner, T. Paskova, J. F. Muth, K. D. Chabak, and G. H. Jessen, Self-Heating Characterization of Ga2O3 Thin Channel MOSFETs by Pulsed I-V and Raman Nano thermography, IEEE Transaction on Electron Devices 67 (2019) 204-211.
260. S. Gleco, O. Romanyuk, I. Gordeev, K. Kuldova, T. Paskova, and A. Ivanisevic, Modification of surface properties by wet chemical treatment of AlxGa1-xN with gradient aluminium composition, ACS Omega 4 (2019) 11760 -11769.
259. Blumenschein, T. Paskova, and J. Muth, Effect of Growth Pressure on PLD-Deposited Ga2O3 Thin Films for Deep-UV Photodetectors, Physica Status Solidi A 216 (2019) 1900098.
258. T. Adams, N. R. Vinueza, O. Romanyuk, I. Gordeev, T. Paskova, and A. Ivanisevic, Nanostructured GaOOH modified with reactive yellow, red and blue water-soluble dyes, AIP Advances 9 (2019) 025005.
257. J. Snyder, H. Davis, N. G. Berg, B. Pearce, O. Romanyuk, P. Jiricek, T. Paskova, and A. Ivanisevic, Passivation of Semipolar (10-1-1) GaN with Different Organic Adsorbates, Materials Letters 236 (2019) 201.
2018:
256. Blumenschein, M. Slomski, P. P. Paskov, F. Kaess, M. H. Breckenridge, J.F. Muth, and T.Paskova, Thermal conductivity of bulk and thin film β-Ga2O3 measured by the3ω technique, Proc. of SPIE OPTO Vol. 10533 (2018) 105332G-1
2017:
255. P.P. Paskov, M. Slomski, J. Leach J. Muth, and T. Paskova, Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment, AIP Advances 7 (9) (2017) 095302.
255.. M. Slomski, N. Blumenshtain, P.P. Paskov, J. Muth, and T. Paskova, Anisotropic thermal conductivity of bGa2O3 at elevated temperatures: effect of Sn and Fe doping, Journal of Applied Physics 121 (2017) 235104
254. I Bartoš, O Romanyuk, T Paskova, P Jiříček, Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of GaN surfaces, Surface Science 664 (2017) 241-245
253. N.G. Berg, T. Paskova, and A. Ivanisevic, Tuning the biocompatibility of aluminum nitride, Materials Letters 189 (2017) 1-4
252. M. Slomski, P.P. Paskov, J. Leach J. Muth, and T. Paskova, Thermal conductivity of bulk GaN grown by HVPE – effect of Si doping, Phys. Stat. Sol. (b) 254 (2017) 1600713
2016:
251. O Romanyuk, I Bartoš, J Brault, P De Mierry, T Paskova, P Jiříček, GaN quantum dot polarity determination by X-ray photoelectron diffraction, Applied Surface Science 389 (2016) 1156-1160
250. I Bartoš, O Romanyuk, J Houdkova, PP Paskov, T Paskova, P Jiříček, Electron band bending of polar, semipolar and non-polar GaN surfaces, Journal of Applied Physics 119 (2016) 105303.
2015:
249. S. Wilkins, M. J. Slomski, T. Paskova, J. L. Weyher and A. Ivanisevic, Modulated optical sensitivity with nanostructured gallium nitride, Appl. Phys. Lett. 106 (2015) 151602.
248. S. Wilkins, T. Paskova, L. C. Reynolds and A. Ivanisevic, Comparison of the stability of functionalized GaN and GaP, ChemPhysChem. 327 (2015) in press.
247. O. Romanyuk, P. Jiricek, I. Bartoš, S. Fernandez-Garrido, L. Geelhaar, O. Brandt and T. Paskova, Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction, Appl. Phys. Lett. 106 (2015) 021602.
246. S. Wilkins, T. Paskova and A. Ivanisevic, Modified surface chemistry, potential and optical properties of polar Gallium Nitride via long chained phosphonic acids, Appl. Surf. Sci. 327 (2015) 498-503.
2014:
245. O. Romanyuk, P. Jiricek, T. Paskova and I. Bartoš, Polarity determination of semipolar nitrides: X-ray photoelectron diffraction study of GaN {10-11} and GaN{20-21} surfaces, J. Appl. Phys. 116 (2014) 104909.
244. N. Berg, M.W. Nolan, T. Paskova and A. Ivanisevic, Surface characterization of Gallium Nitride modified with peptides before and after exposure to ionizing radiation in solutions, Langmuir 30 (2014) 15477–15485.
243. F. Liu, L. Huang, D. Schreiber, S. Kuchibatla, S. Thevuthasan, E.A. Preble, T. Paskova, K. R. Evans, R. F. Davis and L. M. Porter, Composition and Interface Analysis of InGaN/GaN Multi-Quantum-Wells on GaN Substrates Using Atom Probe Tomography, J. Vac. Sci. Technol. B 32 (2014) 051209.
242. S.A. Ishmael, M. Slomski, H. Luo, M. White, A. Hunt, N. Mandzy, J.F. Muth, R. Nesbit, T. Paskova, W. Straka and J. Schwartz, Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets, Superconductor Science and Technology 27 (2014) 095018.
241. S. Wilkins, M. Greenough, C. Arellano, T. Paskova and A. Ivanisevic, In-situ functionalization of gallium nitride with phosphoric acid derivatives during etching, Langmuir 30 (2014) 2038-2046.
240. S. Wilkins, T. Paskova and A. Ivanisevic, Modulation of optical properties of nonpolar GaN by in-situ functionalization with cysteamine assisted phosphoric acid, Appl. Surf. Sci. 295 (2014) 207-213.
239. F. Liu, L. Huang, R. Kamaladasa, Y. Picard, E. A. Preble, T. Paskova, K. R. Evans, R. F. Davis and L. M. Porter, Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates, J. Crystal Growth 387 (2014) 16-22.
238. L. Bain, S. Jewett, A. Mukund, S. Bedair, T. Paskova and A. Ivanisevic, Molecular interactions on InxGa1-xN surfaces, MEMS and Nanotechnology 5 (2014) 109-114.
2013:
237. A. T. Roberts, A. Mohanta, H. O. Everitt, J. Leach, D. Van Den Broeck, A. M. Hosalli, T. Paskova and S. Bedair, Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates, Applied Physics Letters 103 (2013) 181106.
236. N. Killat, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins and M. Kuball, Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges, Applied Physics Letters 103 (2013) 193507.
235. O. Romanyuk, P. Jiricek, T. Paskova I. Bieloshapka and I. Bartoš, GaN polarity determination by photoelectron diffraction, Applied Physics Letters 103 (2013) 091601.
234. L. Bain, S. Jewett, A. Mukund, S. Bedair, T. Paskova and A. Ivanisevic, Biomolecular gradients via semiconductor gradients: characterization of amino acid adsorption to InxGa1-xN surfaces, ACS Applied Materials & Interfaces 5 (2013) 7236-7243.
233. S. Wilkins, T. Paskova and A. Ivanisevic, Effect of etching with cysteamine assisted phosphoric acid on GaN surface oxide formation, Journal Applied Physics 114 (2013) 064907.
232. A.F. Storm, D.A. Deen, D.S. Katzer, D.J. Meyer, S. C. Binari, T. Gougousi, T. Paskova, E. A. Preble, K.R. Evans, L. Zhou and D.J. Smith, Ultrathin barrier AlN/GaN heterostructures grown by rf-plasma assisted molecular beam epitaxy on free-standing GaN substrates, J. Crystal Growth 380 (2013) 14-17.
231. P. Frajtag, N. Nepal, T. Paskova, S.M. Bedair and N.A. El-Masry, Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy, J. Crystal Growth 367 (2013) 88-93.
230. D.J. Meyer, D.A. Deen, A D.F. Storm, M. G. Ancona, D.S. Katzer, R. Bass, B. P. Downey, S. C. Binari, T. Gougousi, T. Paskova, E.A. Preble and K.R. Evans, High electron velocity sub-micron AlN/GaN HEMTs on free-standing GaN substrates, IEEE Electron Device Letters 34 (2013) 199-201.
229. O. Romanyuk, P. Jiricek, P. Mutombo, T. Paskova and I. Bartoš, Surface analysis of free-standing GaN substrates with polar, nonpolar, and semi-polar crystal orientations, Proc. of SPIE OPTO Vol. 8625 (2013) p.86252I-9.
228. S. Okur, K. Jarašiūnas, S. A. Hafiz, J. Leach, T. Paskova, V. Avrutin, H. Morkoç and Ü. Özgür, Recombination dynamics in non-polar m-plane GaN investigated by time-and polarization-resolved photoluminescence, Proc. of SPIE OPTO Vol. 8625 (2013) p.86252D-8.
227. D. McNamara, M. A. Foussekis, A. A. Baski, X. Li, V. Avrutin, H. Morkoç, J. H. Leach, T. Paskova, K. Udwary, E. Preble and M. A. Reshchikov, Electrical and optical properties of bulk GaN studied by Kelvin probe and photoluminescence, Phys. Stat. Sol. (c ) 10 (2013) 536-539.
2012:
226. C.J.M. Stark, T. Detchprohm, L. Zhao, T. Paskova, E. Preble and C. Wetzel, Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction, Appl. Phys. Lett. 101 (2012) 232106.
225. P. Ščajev, K. Jarašiūnas, Ü. Özgür, H. Morkoç, J. Leach and T. Paskova, Anisotropy of free-carrier absorption and diffusivity in m-plane GaN, Appl. Phys. Lett. 100 (2012) 022112.
224. P. Gladkov, E. Hulicius, T. Paskova, E. A. Preble and K. Evans, Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe, Appl. Phys. Lett. 100 (2012) 031908.
223. J. Dashdorj, M.E. Zvanut, J.G. Harrison, K. Udwary and T. Paskova, Charge transfer in semi-insulating Fe-doped GaN, J. Appl. Phys. 112 (2012) 013712.
222. M. Ťapajna, N. Killat, J. Moereke, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D.E. Walker, M. Trejo, G. D. Via, J .D. Blevins and M. Kuball, Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates, IEEE Electron Device Letters 33 (2012) 1126-1128.
221. N. Killat, M. Montes, J. W. Pomeroy, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins and M. Kuball, Thermal properties of AlGaN/GaN HEMTs on bulk-GaN substrates, IEEE Electron Device Letters 33 (2012) 366-368.
220. D.F. Storm, D.J. Meyer, D.S. Katzer, S.C. Binari, T. Paskova, E.A. Preble, K.R. Evans, L. Zhou and D. J. Smith, Homoepitaxial N-polar GaN layers and HEMT structures grown by rf-plasma molecular beam epitaxy, J. Vac. Sci. Technol. B 30 (2012) 02B113.
219. P. Frajtag, A.M. Hosalli, J. P. Samberg, P. C. Colter, T. Paskova, N.A. El-Masry and S.M. Bedair, Overgrowth of GaN on GaN nanowires produced by mask-less etching, J. Crystal Growth 352 (2012) 203-208.
218. L. Huang, F. Liu, J. Zhu, R. Kamaladasa, E. A. Preble, T. Paskova, K. Evans, L. Porter, Y. N. Picard and R. F. Davis, Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates, J. Crystal Growth 347 (2012) 88-94.
217. G. Liu, J. Zhang, X.-H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao and N. Tansu, Metalorganic vapor phase epitaxy and characterizations of lattice-matched AlInN alloys on GaN / Sapphire templates and free-standing GaN substrates, J. Crystal Growth 340 (2012) 66-73.
216. E. Meissner, S. Schweigard, J. Friedrich, T. Paskova, K. Udwary, G. Leibiger and F. Habel, Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN, J. Crystal Growth 340 (2012) 78-82.
215. O. Romanyuk,P. Jiricek and T. Paskova, Quantitative Low-Energy Electron Diffraction Analysis of GaN(000-1) (1 x 1) Reconstruction, Surf. Sci. 606 (2012) 740-743.
214. C. Edmunds, L. Tang, D. Li, M. Cervantes, G. Gardner, T. Paskova, M. J. Manfra and O. Malis, Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures grown by MBE on Low-Defect GaN Substrates, Journal Electronic Materials 41 (2012) 881-886.
213. K.Y. Lai, T. Paskova, V.D. Wheeler, J.A. Grenko, M.A.L. Johnson, K. Udwary, E.A. Preble and K.R. Evans, Comparison of InGaN/GaN quantum wells grown on m-plane GaN subst3ate and c-plane sapphire, Phys. Stat. Sol. (a) 209 (2012) 559-564.
212. O. Romanyuk, P. Jiricek and T. Paskova, Atomic Structure and Optical Properties of Polar GaN(000-1) Surface, Journal of Physics: Conference Series 398 (2012) 012013.
211. K. Jarašiūnas, P. Ščajev, S. Nargelas, R. Aleksiejūnas, J. Leach, T. Paskova, S. Okur, Ü. Özgür and H. Morkoç, Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques, Proc. of SPIE Vol. 8262 (2012), Paper 8262-15.
2011:
210. O. Romanyuk,P. Jiricek, J. Zemek, S. Tougaard and T. Paskova, Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy, J. Appl. Phys. 110 (2011) 043507
209. J. J. Mareš, P. Hubík, J. Krištofik, L.Prušáková, Š. Uxa, T. Paskova and K. Evans, Radial space-charge-limited electron flow in semi-insulating GaN:Fe, J. Appl. Phys. 110 (2011) 013723
208. D. O. Dumcenco, S. Levcenco, Y. S. Huang, C. L. Reynolds, Jr., J. G. Reynolds, K. K. Tiong, T. Paskova and K. Evans, Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy, J. Appl. Phys. 109 (2011) 123508
207. Y. Wang, H. Xu, S. Alur, Y, Sharma, F. Tong, P. Gartland, T. Issacs-Smith, C. Ahyi, J. Williams, M. Park, G. Wheeler, M. Johnson, A.A. Allerman, A. Hanser, T. Paskova, E. A. Preble and K. R. Evans, Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer, Phys Stat. Sol. (c) 8 (2011) 2430-2432.
206. B. Monemar, P. Paskov, G. Pozina, C. Hemmingsson, P. Bergman, D. Lindgren, L. Samuelson, X. Ni, H. Morkoç, T. Paskova, Z. Bi and J. Ohlsson, Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates, Phys Stat. Sol. (a) 208 (2011) 1532.
205. S. M. Eichfeld, D. Won, K. Trumbull, M. Labella, X. Weng, J. Robinson, D. Snyder, and J. M. Redwing, E. Preble, T. Paskova and K. Evans, Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates, Phys Stat. Sol. (c) 8 (2011) 2053-2055.
204. X. Li, X. Ni, H. Y. Liu, F. Zhang, S. Liu, J. Lee, V. Avrutin, Ü. Özgür, T. Paskova, G. Mulholland, K. R. Evans and H. Morkoç, On the reduction of efficiency loss in polar c -plane and non-polar m -plane InGaN light emitting diodes, Phys. Stat. Sol. (c) 8 (2011) 1560-1563.
203. Y. Wang, S. Alur, Y. Sharma, F. Tong, R. Thapa, P. Gartland, T. Issacs-Smith, C. Ahyi, J. Williams, M. Park, M. Johnson, T. Paskova, E. A. Preble and K. Evans, Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate, Semicond. Sci. & Technol. 26 (2011) 022002.
202. J.H. Leach, N. Biswas, T. Paskova, E.A. Preble, K.R. Evans, M. Wu, X. Ni, X. Li, Ü Özgür and H. Morkoç, Effect of Substrate Offcut on AlGaN/GaN HFET structures on Bulk GaN Substrates, Proc. of SPIE Vol. 7939 (2011) 7939XX-1.
201. B. Monemar, P. P. Paskov, G. R. Pozina, C. Hemmingsson, P. Bergman, D. Lindgren, L. Samuelson, X. Ni, H. Morkoç, T. Paskova, Z. Bi and J. Ohlsson, Photoluminescence of Mg-doped m-plane GaN grown on bulk GaN templates, Proc. of SPIE Vol. 7939 (2011) 793907-1.
2010:
200. M. Zhu, S. You, T. Detchprohm, T. Paskova, E. Preble, D. Hanser and C. Wetzel, Inclined dislocation-pair relaxation mechanisms in homoepitaxial green GaInN/GaN light emitting diodes, Phys. Rev. B 81 (2010) 125325.
199. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland and K. R. Evans, InGaN staircase electron injector for reduction of electron overflow in InGaN LED, Appl. Phys. Lett. 97 (2010) 031110.
198. T. Detchprohm, M. Zhu, Y. Li, L. Zhao, S. Yu, C. Wetzel, E. Preble, T. Paskova and D. Hanser, Wavelength-stable cyan and green LEDs on non-polar m-plane GaN bulk substrates, Appl. Phys. Lett. 96 (2010) 051101.
197. J.H. Leach, C. Zhu, M. Wu, X. Ni , X. Li, J. Xie, U. Ozgur, H. Morkoç, J. Liberis, E. Sermuksnis, A. Matulionis, T. Paskova, E. A. Preble and K. Evans, Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN HFETs on bulk GaN substrates, Appl. Phys. Lett. 96 (2010) 133505.
196. J.H. Leach, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, and H. Morkoç, T. Paskova, E. Preble, K.R. Evans and C.Z. Lu, Carrier Velocity in InAlN/AlN/GaN HFETs on Fe-Doped Bulk GaN substrates, Appl. Phys. Lett. 96 102109 (2010).
195. S. You, T. Detchprohm, M. Zhu, W. Hou, E.A. Preble, D. Hanser, T. Paskova and C. Wetzel, Highly polarized green light emitting diode in m-axis GaInN/GaN, Appl. Phys. Express, 3 (2010) 102103.
194. X. Ni, X. Li, J. Lee, H. Y. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, Matulionis, T. Paskova, G. Mulholland and K.R. Evans, The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes, Phys. Stat. Sol. (RRL) 4 (2010) 194.
193. M. Wu,J. H. Leach, X. Ni, X. Li, J. Xie, S. Doğan, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K.R. Evans and C.Z. Lu, InAlN/GaN Heterostructure Field-Effect Transistors on Fe-doped semi-insulating GaN Substrates, Vac Sci. Technol. B 28 (2010) 908
192. K.Y. Lai, T. Paskova, V.D. Wheeler, J.A. Grenko, M.A.L. Johnson, K. Udwary, E.A. Preble and K.R. Evans, Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth, J. Crystal Growth 312 902 (2010).
191. J.L. Weyher, B. Łucznik, I. Grzegory, J. Smalc-Koziorowska and T. Paskova, Revealing extended defects in HVPE-grown GaN, Crystal Growth 312 (2010) 2611-2615.
190. P. Gladkov, J. Humlíček, E. Hulicius T. Šimeček, T. Paskova and K. Evans, Effect of Fe doping on optical properties of self standing semi-insulating HVPE GaN:Fe, Crystal Growth, 312 (2010) 1205.
189. D.F. Storm, D.S. Katzer, D.A. Deen, R. Bass, D.J. Meyer, S.C. Binari, T. Paskova, E.A. Preble and K.R. Evans, Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructure, Sol. State Electronics 54 (2010) 1470-73.
188. F. Kadlec, C. Kadlec, T. Paskova and K.R. Evans, Effect of Fe doping on the terahertz conductivity of GaN single crystals, J. Phys. D: Appl. Phys. 43 145401 (2010).
187. N.T. Son, C.G. Hemmingsson, N. Morishita, T. Ohshima, T. Paskova, K.R. Evans,A. Usui, J. Isoya, B. Monemar and E. Janzén, Radiation induced defects in GaN, Physica Scripta T141 (2010) 014015.
186. H. Xu, S. Alur, Y. Wang, A.-J. Cheng, K. Kang, Y. Sharma, M. Park, C. Ahyi, J. Williams, C. Gu, A. Hanser, T. Paskova, E. A. Preble, K. R. Evans and Y. Zhou, In-situ Raman analysis of bulk GaN-based Schottky rectifiers under operation, J. of Electronic Materials 39 (2010) 2237-2242.
185. J. A. Grenko, C. L. Reynolds, Jr., D.W. Barlage, and M. A. L. Johnson, S.E. Lappi, C.W. Ebert, E. A. Preble, T. Paskova and K. Evans, Physical properties of AlGaN/GaN HFET heterostructures grown on vicinal substrates, J. of Electronic Materials 39 (2010) 504
184. J.A. Grenko, C.W. Ebert, C.L. Reynolds, Jr., G.J. Duscher, D.W. Barlage, and M.A.L. Johnson, S.E. Lappi, E. A. Preble, T. Paskova and K. Evans, Optimization of homoepitaxially grown AlGaN/GaN heterostructures, Phys. Stat. Sol. (a) 207 (2010) 2292.
183. B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, H. Amano, I. Akasaki, S. Figge, D. Hommel, T. Paskova and A. Usui, Mg-related acceptors in GaN, Phys. Stat. Sol. (c) 7 (2010) 1850.
182. M. Zhu, S. You, T. Detchprohm, T. Paskova, E. A. Preble, D. Hanser and C. Wetzel, Various misfit Dislocations in Green and Yellow GaInN/GaN Light Emitting Diodes, Phys Stat. Sol. (a) 207 (2010) 1305-1308.
181. T. Detchprohm, M. Zhu, S. Yu, Y. Li, L. Zhao, E.A. Preble, T. Paskova, D. Hanser and C. Wetzel, Cyan and Green Light Emitting Diodes on Non-Polar m-Plane GaN Bulk Substrate, Phys. Stat. Sol. (c) 7 (2010) 2190.
180. J. Lee, X. Ni, M. Wu, X. Li, R. Shimada, U. Özgür, A. Baski, H. Morkoç, T. Paskova, G. Mulholland and K. Evans, Internal quantum efficiency of m-plane InGaN on Si and GaN, Proc. of SPIE Vol. 7602 (2010) 76021N-1/N-6.
179. X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, H. Morkoc, T. Paskova, G. Mulholland and K. Evans, Efficiency retention at high current injection levels in m-plane InGaN LEDs Proc. of SPIE Vol. 7602 (2010) 76021R-1/R-6.
178. J. Lee, X. Li, X. Ni, Ü. Özgur, A. Baski, H. Morkoç, T. Paskova, G. Mulholland and K. Evans, On carrier spillover in c- and m-plane InGaN Light Emitting Diodes, Proc. of SPIE Vol. 7602 (2010) 760224-1/-7.
177. X. Ni, X. Li, J. Lee, H. Y. Liu, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland and K.R. Evans, On the Light Emission in GaN Based Heterostructures at High Injection, Mater. Res, Soc. Symp. Proc. Vol. 1202 (2010) 1202-I02-06.
2009:
176. B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, T. Kawashima, H. Amano, I. Akasaki, T. Paskova, S. Figge, D. Hommel and A. Usui, Evidence for two Mg related acceptors in GaN, Phys. Rev. Lett. 102 (2009) 235501.
175. N.T. Son, C.G. Hemmingsson, T. Paskova, K.R. Evans,A. Usui, N. Morishita, T. Ohshima, J. Isoya, B. Monemar and E. Janzén, Identification of the gallium vacancy-oxygen pair defect in GaN, Phys. Rev. B 80 (2009) 153202.
174. J. Lee, X. Li, X. Ni, Ü. Özgür, and H. Morkoç, T. Paskova, G. Mulholland and K.R. Evans, On carrier spill over in c- and m-plane InGaN light emitting diodes, Appl. Phys. Lett. 95 (2009) 201113.
173. X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, and H. Morkoç, T. Paskova, G. Mulholland and K.R. Evans, Efficiency retention at high current injection levels in m-plane InGaN LEDs, Appl. Phys. Lett. 95 (2009) 121107.
172. X. Ni, J. Lee, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. A. Baski, and H. Morkoç, T. Paskova, G. Mulholland and K.R. Evans, Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN, Appl. Phys. Lett. 95 (2009) 101106.
171. K.Y. Lai, T. Paskova, V.D. Wheeler, J.A. Grenko, M.A.L. Johnson, D.W. Barlage, K. Udwary, E.A. Preble and K.R. Evans, Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates, J. Appl. Phys. 106 (2009) 113104.
170. K. Y. Lai, M. A. L. Johnson, T. Paskova, A. D. Hanser, K. Udwary, E. A. Preble and K. R. Evans, Cathodoluminescence evaluation of subsurface damage in GaN substrate after polishing, Phys. Stat. Sol. (c ) 6 (2009) S325.
169. P. P. Paskov, B. Monemar, T. Paskova, E. A. Preble, A. D. Hanser and K. R. Evans, Optical characterization of bulk GaN substrates with c -, a -, and m -plane surfaces, Phys. Stat. Sol. (c ) 6 (2009) S763.
168. J. A. Grenko, C. W. Ebert, C. L. Reynolds Jr., M. A. L. Johnson, A. D. Hanser, E. A. Preble, T. Paskova and K. R. Evans, Modulation of mobility in homoepitaxially-grown AlGaN/GaN heterostructures, Phys. Stat. Sol. (c ) 6 (2009) S1037.
167. T. Paskova, E.A. Preble, A.D. Hanser, K.R. Evans, R. Kröger, P.P. Paskov, A.J. Cheng, M. Park, J.A. Grenko and M. Johnson, Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics, Phys. Stat. Sol. (c ) 6 (2009) S344.
2008:
166. T. Detchprohm, M. Zhu, Y. Li, C. Wetzel, D. Hanser, E. Preble, L. Liu, T. Paskova and K.R. Evans, Improved performance of green light emitting diodes on a-plane GaN bulk substrates, Appl. Phys. Lett. 92 (2008) 241109.
165. D. Hanser, E. Preble, L. Liu, T. Paskova and K.R. Evans, Fabrication and characterization of native non-polar GaN substrates, J. Crystal Growth 310 (2008) 3953.
164. K.Y. Lai, V.D. Wheeler, J.A. Grenko, M.A.L. Johnson, A.D. Hanser, E.A. Preble, L. Liu, T. Paskova, and K.R. Evans, Enlargement of bulk nonpolar GaN substrates by HVPE regrowth, Phys. Stat. Sol. (c ) 5 (2008) 1886.
163. T. Paskova, A. Hanser, E. Preble, K. Evans, R. Kroeger, F. Tuomisto, R. Kersting, R. Alcorn, S. Ashley, C. Pagel, E. Valcheva, P.P. Paskov and B. Monemar, Defect and emission distribution in bulk GaN grown in polar and nonpolar directions: a comparative analysis, Proc. SPIE Vol. 6894, Gallium Nitride Materials and Devices, Eds. C.W. Litton, J.I. Chyi, Y. Nanishi, and H. Morkoc (2008) p. 68940D-1.
162. P.P. Paskov, B. Monemar, T. Paskova, S. Kamiyama, H. Amano and I. Akasaki, Photoluminescence study of of near-surface GaN/AlN superlattices, Proc. SPIE Vol. 6894, Gallium Nitride Materials and Devices, Eds. C.W. Litton, J.I. Chyi, Y. Nanishi, and H. Morkoc (2008) p. 68940G-1.
161. R. Kroeger and T. Paskova, The role of anisotropy for defect properties in a-plane GaN, Proc. SPIE Vol. 6894, Gallium Nitride Materials and Devices, Eds. C.W. Litton, J.I. Chyi, Y. Nanishi, and H. Morkoc (2008) p. 689403-1.
2007:
160. F. Tuomisto, T. Paskova, R. Kroeger, S. Figge, D. Hommel and B. Monemar, Defect distribution in heteroepitaxial a-plane HVPE GaN grown on MOVPE GaN template, Appl. Phys. Lett. 90 (2007) 121915.
159. R. Kroeger, T. Paskova, S. Figge, D. Hommel, A. Rosenauer and B. Monemar, Interfacial structure of a-plane GaN grown on r-plane sapphire, Appl. Phys. Lett. 90 (2007) 081918.
158. T. Paskova, L. Becker, T. Böttcher, D. Hommel, P.P. Paskov and B. Monemar, Effect of sapphire-substrate thickness on the residual strain and bending in GaN films grown by hydride vapor phase epitaxy, J. Appl. Phys. 102 (2007) 123507.
157. V. Darakchieva, M. Schubert, T. Paskova, P.P. Paskov, H. Arwin, B. Monemar, M. Heuken, S. Figge, D. Hommel, B. Haskell, P. Fini and S. Nakamura, GaN phonons under anisotropic strain: phonon deformation potentials, Phys. Rev. B 75 (2007) 195217.
156. F. Tuomisto, T. Paskova, S. Figge, D. Hommel and B. Monemar, Vacancy defect distribution in heteroepitaxial a-plane GaN grown by HVPE, J. Crystal Growth 300 (2007) 251.
155. V. Darakchieva, T. Paskova, M. Schubert, P.P. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura, Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers, J. Crystal Growth 300 (2007) 233.
154. R. Kroeger, T. Paskova, and A. Rosenauer, Interactions of stacking faults in wurtzite a-plane GaN on r-plane sapphire, Microscopy and Microanalysis (2007).
153. T. Paskova, L. Becker, T. Bottcher, D. Hommel, P.P. Paskov and B. Monemar, Bending in HVPE GaN free-standing films: origin and reduction possibilities, Phys. Stat. Sol. (c ) 4 (2007) 2256.
152. T. Paskova, R. Kroeger, D. Hommel, P.P. Paskov, V. Darakchieva, B. Monemar, E. Preble, A. Hanser, N.M. Williams and M. Totur, Nonpolar a- and m-plane bulk GaN sliced from boules: structural and optical characteristics, Phys. Stat. Sol. (c ) 4 (2007) 2536.
151. R. Kroeger, T. Paskova, A. Rosenauer, D. Hommel, B. Monemar, B. Haskell, P. Fini, J. Speck, and S. Nakamura, Stacking faults and dislocations in a-plane GaN films: origin, evolution and interaction, Phys. Stat. Sol. (c ) 4 (2007) 2564.
150. G. Pozina, B. Monemar, P. P. Paskov, C. Hemmingsson, L. Hultman, H. Amano, I. Akasaki, T. Paskova, S. Figge, D. Hommel and A. Usui, Metastability of the UV luminescence in Mg-doped GaN layers grown by MOVPE on quasi-bulk GaN templates, Physica B 401-402 (2007) 302.
149. T. Paskova, P.P. Paskov, V. Darakchieva, R. Kroeger, D. Hommel, B. Monemar, E. Preble, A. Hanser, N.M. Williams and M. Totur, Strain-free low-defect-density bulk GaN with nonpolar orientation, Mat. Res. Soc. Symp. Proc. 955E (2007) I3.4.
148. R. Kroeger, A. Rosenauer, T. Paskova, D. Hommel, B. Monemar, B. Haskell, P. Fini, J. Speck and S. Nakamura, On the mechanisms of dislocations and stacking fault formation in a-plane GaN films grown by HVPE, Proc. of the AIP Conf. Proc. 893 (2007) 269.
2006:
147. T. Paskova, R. Kroeger, S. Figge, D. Hommel, V. Darakchieva, B. Monemar, E. Preble, A. Hanser, N.M. Williams and M. Totur, High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire by HVPE, Appl. Phys. Lett. 89 (2006) 051914.
146. T. Paskova, D. Hommel, P.P. Paskov, V. Darakchieva, B. Monemar, M. Bockowski, T. Suski, I.Grzegory, F. Tuomisto, K. Saarinen, N. Ashkenov and M. Schubert, Effect of high-temperature annealing on the residual strain and bending in free-standing GaN films grown by hydride vapor phase epitaxy, Appl. Phys. Lett. 88 (2006) 141909.
145. C. Roder, S. Einfeldt, S. Figge, T. Paskova, D. Hommel, P.P. Paskov, B. Monemar, U. Behn, B. Haskell, P. Fini and S. Nakamura, Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates, J. Appl. Phys. 100 (2006) 103511.
144. F. Tuomisto, K. Saarinen, T. Paskova, B. Monemar, M. Bockowski and T. Suski, Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy, J. Appl. Phys. 99 (2006) 066105.
143. P.P. Paskov, T. Paskova, B. Monemar, S. Figge, D. Hommel, B. Haskell, P. Fini, J. Speck and S. Nakamura, Optical properties of nonpolar a-plane GaN layers, Superlattices and Microelectronics 40 (2006) 253.
142. B. Monemar, P.P. Paskov, J.P. Bergman, A.A. Toropov, T. Shubina, S. Figge, T. Paskova, D. Hommel, A. Usui, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki, Optical signatures of dopants in GaN, Materials Science in Semiconductor Processing 9 (2006) 168.
141. V. Darakchieva, B. Monemar T. Paskova, S. Einfeldt, D. Hommel and S. Lourdudoss, Phonons in strained AlGaN/GaN superlattices, Phys. Stat. Sol. (c) 4 (2007) 170.
140. B. Arnaudov, T. Paskova, S. Evtimova, B. Monemar, H. Lu and W.J. Schaff, Electron concentration and mobility profiles in InN layers grown by MBE, Phys. Stat. Sol. (a) 203 (2006) 1681.
139. C. Roder, S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, B.A. Haskell, P.T. Fini, J.S. Speck and S. Nakamura, Strain in a-plane GaN layers grown on r-plane sapphire substrates, Phys. Stat. Sol. (a) 203 (2006) 1672.
138. B. Monemar, P.P. Paskov, J.P. Bergman, T. Paskova, S. Figge, J. Dennemarck and D. Hommel, The dominant shallow 0.225 eV acceptor in GaN, Phys. Stat. Sol. (b) 243 (2006) 1604.
137. V. Darakchieva, T. Paskova, P.P. Paskov, H. Arwin, M. Schubert, B. Monemar, S. Figge, D. Hommel, B. Haskell, P. Fini and S. Nakamura, Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN, Phys. Stat. Sol. (b) 243 (2006) 1594.
136. F. Tuomisto, S. Hautakangas, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen, M. Bockowski, T. Suski, T. Paskova, B. Monemar, X. Xu and D. C. Look, Dissociation of VGa-ON complexes in HVPE GaN by high pressure and high temperature annealing, Phys. Stat. Sol. (b) 243 (2006) 1436.
135. T. Paskova, V. Darakchieva, P.P. Paskov, B. Monemar, M. Bukowski, T. Suski, N. Ashkenov, M. Schubert and D. Hommel, Bending in HVPE GaN free-standing films: effects of laser lift-off, polishing and high-pressure annealing, Phys. Stat. Sol. (c) 3 (2006) 1475.
134. P.P. Paskov, R. Schifano, T. Malinauskas, T. Paskova, J.P. Bergman, B. Monemar, S. Figge, D. Hommel, B. Haskell, P. Fini and S. Nakamura, Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers, Phys. Stat. Sol. (c) 3 (2006) 1499.
133. B. Monemar, P.P. Paskov, J.P. Bergman, T. Paskova, C. Hemmingsson, T. Malinauskas, K. Jarasiunas, P. Gibart and B. Beaumont, Time resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN, Physica B 376-377 (2006) 482.
132. P.P. Paskov, R. Schifano, T. Paskova, T. Malinauskas, J.P. Bergman, B. Monemar, S. Figge and D. Hommel, Structural defect related emissions in nonpolar a-plane GaN, Physica B 376-377 (2006) 473.
131. T. Paskova, R. Kroeger, P.P. Paskov, S. Figge, and D. Hommel, B. Monemar, B. Haskell, P. Fini, J. Speck and S. Nakamura, Microscopic emission properties of nonpolar GaN grown by HVPE, Proc. SPIE Vol. 6121, Gallium Nitride Materials and Devices, Eds. C.W. Litton, J.G. Grode, H. Markoc, and A. Madhukar (2006) p. 48-54.
2005:
130. V.N. Strocov, T. Schmitt, J.-E. Rubensson, P. Blaha, T. Paskova and P.O. Nilsson, Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN, Phys. Rev. B 72 (2005) 085221.
129. V. Darakchieva, E. Valcheva, P.P. Paskov, M. Schubert, T. Paskova, B. Monemar, H. Amano and I. Akasaki, Phonon mode behaviour in strained AlN/GaN superlattices, Phys. Rev. B 71 (2005) 115329.
128. T. Paskova, B. Arnaudov, P.P. Paskov, E.M. Goldys, S. Hautakangas, K. Saarinen, U. Sodervall and B. Monemar, Donor-acceptor pair emission enhancement in mass-transport-grown GaN, J. Appl. Phys. 98 (2005) 033508.
127. V. Darakchieva, T. Paskova, P.P. Paskov, B. Monemar, N. Ashkenov and M. Schubert, Structural characteristics and lattice parameters of free-standing GaN quasi-substrates grown by HVPE, J. Appl. Phys. 97 (2005) 013517.
126. P.P. Paskov, R. Schifano, T. Paskova, B. Monemar, S. Figge and D. Hommel, Emission properties of a-plane GaN grown by meta-lorganic chemical-vapor deposition, J. Appl. Phys. 98 (2005) 093519.
125. T. Paskova, T. Suski, M., Bockowski, P.P. Paskov, V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen, N. Ashkenov, M. Schubert, C. Roder and D. Hommel, High pressure annealing of HVPE GaN free-standing films: redistribution of defects and strain, Mat. Res. Soc. Symp. Proc. 831 (2005) E8.18.
124. B. Monemar, T. Paskova, C. Hemmigston, H. Larsson, P.P. Paskov, I.G. Ivanov and A. Kasic, Growth of thick GaN layers by hydride vapour phase epitaxy, J. Ceramic Processing Research 6 (2005) 153.
123. T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmita and B. Monemar, Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers, J. Crystal Growth 281 (2005) 55.
122. S. Figge, T. Böttcher, J. Dennemarck, R. Kröger, T. Paskova, B. Monemar and D. Hommel, Optoelectronic devices on bulk GaN, J. Crystal Growth 281 (2005) 101.
121. T. Paskova, V. Darakchieva, P.P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S. Tungasmita and B. Monemar, Nonpolar a-plane HVPE GaN: growth and in-plane anisotropic properties, Phys. Stat. Sol. (c) 2 (2005) 2027.
120. P.P. Paskov, J.P. Bergman, V. Darakchieva, T. Paskova, P.O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki, Emission properties of GaN/AlN superlattices grown by MOCVD, Phys. Stat. Sol. (c) 2 (2005) 2345.
119. B. Arnaudov, T. Paskova, P.P. Paskov, B. Magnusson, B. Monemar, H. Lu and W.J. Schaff, On the nature of the near band edge luminescence of InN epitaxial layers, AIP Conf. Proc. 772 (2005), Eds. J. Menendes and Ch. Van de Walle, p.285.
118. T. Paskova, B. Arnaudov, P.P. Paskov, E.M. Goldys, K. Saarinen, U. Sodervall and B. Monemar, Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN, AIP Conf. Proc. 772 (2005), Eds. J. Menendes and Ch. Van de Walle, p.261.
2004:
117. P.P. Paskov, T. Paskova, P.O. Holtz and B. Monemar, Polarized photoluminescence study of free and bound excitons in free standing GaN, Phys. Rev. B 70 (2004) 035210.
116. V. Darakchieva J. Birch, M. Schubert, T. Paskova, S. Tungasmita, A. Kasic, R. Wagner and B. Monemar, Strain related structural and vibrational properties of thin epitaxial AlN films, Phys. Rev. B 70 (2004) 045411.
115. B. Arnaudov, T. Paskova, P.P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu, W. Schaff, H. Amano and I. Akasaki, Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels, Phys. Rev. B 69 (2004) 115216.
114. O. Gelhausen, M.R. Phillips, E.M. Goldys, T. Paskova, B. Monemar, M. Strassburg and A. Hoffmann, Dissociation of H-related defect complexes in Mg-doped GaN, Phys. Rev. B 69 (2004) 125210.
113. V. Darakchieva, P.P. Paskov, E. Valcheva, T. Paskova, M. Schubert, B. Monemar, H. Lu and W. Schaff, Deformation potentials of E1(TO) and E2 phonon modes of InN, Appl. Phys. Lett. 84 (2004) 3636.
112. V.N. Strocov, T. Schmitt, J.-E. Rubensson, P. Blaha, T. Paskova and P.O. Nilsson, Band structure effects in nitrogen K-edge resonant inelastic X-ray scattering from GaN, Phys. Stat. Sol. (b) 421 (2004) R27.
111. T. Paskova, P.P. Paskov, E.M. Goldys, V. Darakchieva, U. Södervall, M. Godlewski, M. Zielinski, E. Valcheva, C.F. Carlström, Q. Wahab and B. Monemar, Characterization of mass-transport grown GaN by hydride vapour phase epitaxy, J. Crystal Growth 273 (2004) 118.
110. V. Darakchieva, P.P. Paskov, E. Valcheva, T. Paskova, B. Monemar, M. Abrashev, M. Schubert, H. Lu and W. Schaff, Infrared ellipsometry and Raman studies of hexagonal InN films: correlation between strain and vibrational properties, Microelectronics and Superlattices 36 (2004) 573.
109. B. Arnaudov, T. Paskova, P.P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu, W.J. Schaff, H. Amano and I. Akasaki, Free-to-bound radiative recombination in highly conducting InN epitaxial layers, Microelectronics and Superlattices 36 (2004) 563.
108. R. Leon, J. Nadeau, K. Evans, T. Paskova and B. Monemar, Electron irradiation effects on nanocrystal quantum dots used in bio-sensing applications, EEE Transactions on Nuclear Science, 51 (2004) 3186.
107. T. Paskova, P.P. Paskov, E. Valcheva, V. Darakchieva, J. Birch, A. Kasic, B. Arnaudov, S. Tungasmita and B. Monemar, Polar and nonpolar GaN grown by HVPE: preferable substrates for nitride-based emitting devices, Phys. Stat. Sol. (a) 201 (2004) 2265.
106. B. Monemar, P.P. Paskov, H. Haridizadeh, J.P. Bergman, E. Valcheva, V. Darakchieva, B. Arnaudov, T. Paskova, P.O. Holtz, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano and I. Akasaki, Optical investigations of AlGaN/GaN quantum wells and superlattices, Phys. Stat. Sol. (a) 201 (2004) 2251.
105. T. Paskova, E. Valcheva, V. Darakchieva, P.P. Paskov, B. Arnaudov, B. Monemar, J. Birch, M. Heuken, R.F. Davis and P. Gibart, Growth, separation and properties of HVPE grown GaN by using different nucleation scheme, IPAP Conference Series 4 (2004) 14.
104. T. Paskova, E. Valcheva, P.P. Paskov, B. Monemar, A.M. Rockowski, R.F. Davis, B. Beaumont and P. Gibart, HVPE-GaN: comparison of emission properties and microstructures of films grown on different laterally overgrown templates, Diamond and Related Materials 13 (2004) 1125.
103. T. Paskova, E. Valcheva, V. Darakchieva, E. Valcheva, P.P. Paskov, B. Monemar, T. Böttcher, C. Roder and D. Hommel, HVPE-GaN thick films for quasi-substrate applications: strain and wafer bending, J. Electronic Materials 33 (2004) 389.
102. P.P. Paskov, T. Paskova, P.O. Holtz and B. Monemar, Polarised photoluminescence of exciton-polaritons in free-standing GaN, Phys. Stat. Sol. (a) 201 (2004) 678.
101. P.P. Paskov, T. Paskova, P.O. Holtz and B. Monemar, Polarisation dependent spectroscopy of the near bandgap emission in free-standing GaN, Mat. Res. Soc. Symp. Proc. 798 (2004) Y.6.1.
100. O. Gelhausen, M. R. Phillips, E.M. Goldys, T. Paskova, B. Monemar, A. Hoffmann and M. Strassburg, Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN, Mat. Res. Soc. Symp. Proc. 798 (2004) Y.5.20.
99. C. Roder, T. Böttcher, D. Hommel, T. Paskova and B. Monemar, Curvature and strain in thick HVPE-GaN for quasi-substrate applications, Mat. Res. Soc. Symp. Proc. 798 (2004) Y2.11.
98. V. Darakchieva, P.P. Paskov, M. Shubert, T. Paskova, A. Kasic, E. Valcheva, B. Monemar, H. Amano and I. Akasaki, Strain evolution and phonons in AlN/GaN superlattices, Mat. Res. Soc. Symp. Proc. 798 (2004) Y5.60.
97. B. Arnaudov, T. Paskova, P.P. Paskov and B. Monemar, InGaN – a new possibility for optoelectronic devices in wide spectral range, Proc. of the IC “Electronics 2004”, May 21-22, 2004, Sofia, Bulgaria, p.27.
2003:
96. B. Arnaudov, T. Paskova, S. Evtimova, E. Valcheva, B. Monemar and M. Heuken, Multilayer model Hall-effect data analysis of semiconductor structures with step-changed conductivity, Phys. Rev. B 67 (2003) 45314.
95. V. Darakchieva, P.P. Paskov, T. Paskova, E. Valcheva, B. Monemar and M. Heuken, Lattice parameters of GaN layers grown on a-plane sapphire: effect of in-plane strain anisotropy, Appl. Phys. Lett. 82 (2003) 703.
94. E. Valcheva, T. Paskova and B. Monemar, Nanopipes and their relation to the growth modes in thick GaN layers grown on sapphire by hydride vapor phase epitaxy, J. Crystal Growth 255 (2003) 19.
93. T. Paskova, V. Darakchieva, E. Valcheva, P.P. Paskov, B. Monemar and M. Heuken, In-plane epitaxial relationships between GaN film and a-plane sapphire: comparison between HVPE and MOVPE, J. Crystal Growth 257 (2003) 1.
92. M.G. Tkachman, T.V. Shubina, V.N. Jmerik, S.V. Ivanov, P.S. Kop’ev, T. Paskova and B. Monemar, Phonon-assisted exiton luminescence in GaN layers grown by MBE and chloride-hydride VPE, Semiconductors 37 (2003) 532.
91. B. Arnaudov, T. Paskova, O. Valassiades, S. Evtimova, P.P. Paskov, B. Monemar and M. Heuken, Magnetic field induced localization of electrons in InGaN-GaN multiple quantum wells, Appl. Phys. Lett. 83 (2003) 2590.
90. V. Darakchieva, T. Paskova, P.P. Paskov, N. Ashkenov, M. Schubert and B. Monemar, Residual strain in HVPE-GaN free-standing and re-grown homoepitaxial layers, Phys. Stat. Sol. (a) 195 (2003) 516.
89. S. Evtimova, B. Arnaudov, T. Paskova, B. Monemar and M. Heuken, Effect of carrier concentration on the microhardness of GaN layers, J. of Materials Science – Materials in Electronics 14 (2003) 771.
88. V. Darakchieva, P.P. Paskov, T. Paskova, M. Shubert, B. Monemar, H. Amano and I. Akasaki, Optical properties of AlN/GaN superlattices grown by metalorganic vapor phase epitaxy, Phys. Stat. Sol. (c) 0 (2003) 2614.
87. E. Valcheva, T. Paskova, B. Monemar, A.M. Roskowski and R.F. Davis, Defect and emission distributions in thick HVPE-GaN layers grown on Pendeo templates, Phys. Stat. Sol. (c) 0 (2003) 2424.
86. B. Arnaudov, T. Paskova, O. Valassiades, S. Evtimova, B. Monemar and M. Heuken, Magnetic freeze-out of electrons in InGaN-GaN multiple quantum wells, Phys. Stat. Sol. (c) 0 (2003) 2635.
85. T. Paskova, V. Darakchieva, E. Valcheva, P.P. Paskov, B. Monemar and M. Heuken, Growth of GaN on a-plane sapphire: in-plane epitaxial relationships and lattice parameters, Phys. Stat. Sol. (b) 240 (2003) 318.
84. E. Valcheva, T. Paskova, G. Radnozi, L. Hultman, B. Monemar, H. Amano and I. Akasaki, Growth-induced defects in AlN/GaN superlattices with different periods, Physica B: Condensed Matter. 340-342 (2003) 1129.
83. V. Darakchieva, M. Schubert, J. Birch, A. Kasic, S. Tungasmita, T. Paskova and B. Monemar, Generalised infrared ellipsometry study of thin AlN epitaxial layers with complex strain behaviour, Physica B: Condensed Matter. 340-342 (2003) 416.
82. V. Darakchieva, P.P. Paskov, T. Paskova, J. Birch, S. Tungasmita and B. Monemar, Vibrational properties of strained AlN films on sapphire, Proc. of the 26th International Conference on the Physics of Semiconductors; July 29 – Aug. 2, 2002; Edinburg, England, 171 (2003) p.D18.
2002:
81. T.V. Shubina, T. Paskova, A.A. Toropov, S.V. Ivanov and B. Monemar, Polarised micro-photoluminescence and reflectance spectroscopy of GaN with k^c: strongly pi-polarised line near the A exciton, Phys. Rev. B 65 (2002) 75212.
80. E. Valcheva, T. Paskova, P.O.Å. Persson, L. Hultman and B. Monemar, Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy, Appl. Phys. Lett. 80 (2002) 1550.
79. V. Darakchieva, P.P. Paskov, T. Paskova, J. Birch, S. Tungasmita and B. Monemar, Deformation potentials of the E1(LO) mode in AlN, Appl. Phys. Lett. 80 (2002) 2302.
78. R. Leon, J. Ibanez, S. Marcinkevicius, J. Siegert, T. Paskova, B. Monemar, S. Chaparro, C. Navarro, S. R. Johnson and Y. -H. Zhang, Defect states in red-emitting InAlAs quantum dots, Phys. Rev. B 66 (2002) 85331.
77. B. Monemar, P.P. Paskov, J.P. Bergman, G. Pozina, T. Paskova, S. Kamiyama, H. Amano and I. Akasaki, Photoluminescence of excitons in In(x)Ga(1-x)N/In(y)Ga(1-y)N Multiple quantum wells, Phys. Stat. Sol. (a) 190 (2002) 161.
76. T.V. Shubina, A.A. Toropov, S.V. Ivanov, J.P. Bergman, T. Paskova, P.O. Holtz and B. Monemar, Peculiarities of exciton-polaritons in GaN at different polarizations studied by micro-photoluminescence spectroscopy, Phys. Stat. Sol. (a) 190 (2002) 205.
75. P.P. Paskov, T. Paskova, P.O. Holtz and B. Monemar, Anisotropy of the free exciton emission in GaN grown on a-plane saphhire, Phys. Stat. Sol. (a) 190 (2002) 75.
74. V. Darakchieva, J. Birch, P.P. Paskov, S. Tungasmita, T. Paskova and B. Monemar, Strain evolution in high temperature AlN buffer layers for HVPE-GaN growth, Phys. Stat. Sol. (a) 190 (2002) 59.
73. T. Paskova, V. Darakchieva, P.P. Paskov, U. Södervall and B. Monemar, Growth and separation related properties of HVPE-GaN free-standing films, J. Crystal Growth 246 (2002) 207.
72. E. Valcheva, T. Paskova and B. Monemar, Extended defects in GaN films grown at high growth rate, J. of Physics: Condensed Matter 14 (2002) 13269.
71. T. Paskova, P.P. Paskov, V. Darakchieva, E.M. Goldys, U. Södervall, E. Valcheva, B. Arnaudov and B. Monemar, Free-standing HVPE-GaN quasi-substrates: impurity and strain distributions, Phys. Stat. Sol. (c) 0 (2002) 209.
70. B. Arnaudov, T. Paskova, S. Evtimova, M. Heuken and B. Monemar, Hall effect data analysis of GaN n+n structures, Phys. Stat. Sol. (b) 234 (2002) 872.
69. E. Valcheva, T. Paskova, P.O.Å. Persson and B. Monemar, Nanopipes in thick GaN films grown at high growth rate, Phys. Stat. Sol. (a) 194 (2002) 532.
68. P.P. Paskov, V. Darakchieva, T. Paskova, P.O. Holtz and B. Monemar, Anisotropy of the in-plane strain in GaN grown on A-plane sapphire, Phys. Stat. Sol. (a) 234 (2002) 892.
67. B. Monemar, P.P. Paskov, T. Paskova, J.P. Bergman, G. Pozina, W.M. Chen, P.N. Hai, I. A. Buyanova, H. Amano and I. Akasaki, Optical Characterisation of III-Nitrides, Mater. Sci. & Engineering 93 (2002) 112.
2001:
66. Pozina, N. V. Edwards, J. P. Bergman, T. Paskova, B. Monemar, M. D. Bremser and R.F. Davis, Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapour deposition, Appl. Phys. Lett. 78 (2001) 1062.
65. B. Arnaudov, T. Paskova, E.M. Goldys, S. Evtimova, A. Henry and B. Monemar, Modelling of free electron recombination band in emission spectra of highly conducting n-GaN, Phys. Rev. B 64 (2001) 45213
64. T. Paskova, E.M. Goldys, P.P. Paskov, Q. Wahab, L.Wilzen, M.P. deJong and B. Monemar, Mass-transport growth and optical emission properties of HVPE-GaN, Appl. Phys. Lett. 78 (2001) 4130.
63. P.P. Paskov, T. Paskova, P.O. Holtz and B. Monemar, Spin-Exchange Splitting of Excitons in GaN, Phys. Rev. B 64 (2001) 115201.
62. E. Valcheva, T. Paskova, J. Birch, S. Tungasmita, P.O.Å. Person, L. Hultman and B. Monemar, Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates, J. Appl. Phys. 90 (2001) 6011.
61. E.M. Goldys, M. Godlewski, T. Paskova, G. Pozina and B. Monemar, Charcterization of the red emission in nominally undoped hydride vapor phase epitaxy GaN, MRS Internet J. Nitride Semicond. Res. 6 (2001) art.1.
60. V. Ratnikov, R. Kyutt, T. Shubina, T. Paskova and B. Monemar, Determination of microdistorsion components and their application to structural characterisation of HVPE GaN epitaxial layers, J. Phys. D: Appl. Phys. 34 (2001) A30.
59. T. Paskova, P.P. Paskov, V. Darakchieva, S. Tungasmita, J. Birch and B. Monemar, Reduction of defect density in HVPE-GaN and their related optical spectra, Phys. Stat. Sol. (a) 183 (2001) 197.
58. T. Paskova, P.P. Paskov, E.M. Goldys, V. Darakchieva, U. Södervall, M. Godlewski, M. Zielinski, E. Valcheva, C.F. Carlström, Q. Wahab and B. Monemar, Mass-transport growth and properties of hydride vapour phase epitaxy GaN, Phys. Stat. Sol. (a) 188 (2001) 447.
57. B. Monemar, P.P. Paskov, G. Pozina, T. Paskova, J.P. Bergman, M. Iwaya, S. Nitta, H. Amano and I. Akasaki, Optical characterization of InGaN/GaN MQW structures without In phase sagregation, Phys. Stat. Sol. (b) 228 (2001) 157.
56. B. Monemar, W.M. Chen, P.P. Paskov, T. Paskova, G. Pozina and J. P. Bergman, The 3.466 eV bound exciton in GaN, Phys. Stat. Sol. (b) 228 (2001) 489.
55. T.V. Shubina, T. Paskova, A.A. Toropov, A. Lebedev, S.V. Ivanov and B. Monemar, Micro-photoluminescence spectroscopy of exciton-polaritons in GaN with the wave vector k normal to the c-axis, Phys. Stat. Sol. (b) 228 (2001) 481.
54. P.P. Paskov, T. Paskova, P.O. Holtz and B. Monemar, Internal structure of free excitons in GaN, Phys. Stat. Sol. (b) 228 (2001) 467.
53. A. Trassoudaine, E. Aujol, R. Cadoret, T. Paskova and B. Monemar, A new mechanism in the growth process of GaN by HVPE, Mat. Res. Soc. Symp. Proc. 639 (2001) p.G3.2.
52. T.V. Shubina, M.G. Tkachman, A.A. Toropov, A.I. Karlik, S.V. Ivanov, P.S. Kop’ev, T. Paskova and B. Monemar, Dissimilarity between cleaved edge and surface regions of GaN(0001) epitaxial layers studied by spatially resolved photoluminescence and reflectivity, Proc. of the 9th International Symposium on Nanostructures-Physics and Technology, June 18-22, 2001, St. Petersburg, Russia, p.149.
51. V. Ratnikov, R. Kyutt, T. Shubina, T. Paskova, E. Valcheva and B. Monemar, X-ray study of dislocation structure of thick HVPE-GaN using measurements of microdistortion tensor, Proc. of the IC on Crystal Growth and Characterisation, Oct. 6-8, 2000, Moskow, Russia, Surface: X-ray, synchrotron and neutron studies 10 (2001) p.101 (in Russian).
2000:
50. E. Valcheva, T. Paskova, S. Tungasmita, P.O.Å. Person, J. Birch, E.B. Svedberg, L. Hultman and B. Monemar, Interface structure of HVPE GaN grown with high temperature reactive sputtered AlN buffer, Appl. Phys. Lett. 76 (2000) 1860.
49. T. Paskova, E. Valcheva, J. Birch, S. Tungasmita, P.O.Å. Persson, R. Beccard, M. Heuken and B. Monemar, Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers, J. Appl. Phys. 88 (2000) 5729.
48. V. Ratnikov, R. Kyutt, T. Shubina, T. Paskova, E. Valcheva and B. Monemar, Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapour phase epitaxy GaN films, J. Appl. Phys. 88 (2000) 6252.
47. E. Valcheva, T. Paskova, M.V. Abrashev, P.O.Å. Persson, P.P. Paskov, E.M. Goldys, R. Beccard, M. Heuken and B. Monemar, Impact of MOCVD-GaN templates on the spatial nonuniformities of strain and doping distribution in hydride vapor phase GaN, Mater. Sci. & Enginering B82 (2001) 35.
46. T. Paskova, E. Valcheva, J. Birch, S. Tungasmita, P.O.Å. Persson, P.P. Paskov, S. Evtimova, M. Abrashev and B. Monemar, Defect and stress relaxation in HVPE-GaN films using high temperature sputtered AlN buffers, J. Crystal Growth 230 (2001) 381.
45. T. Paskova, P.P. Paskov, J. Birch, E. Valcheva, M. Abrashev, S. Tungasmita, and B. Monemar, HVPE regrowth on free-standing GaN quasi-substrates, IPAP Conference Series 1, CS1 (2000), p.19.
44. T. Shubina, A.A. Toropov, V.V. Ratnikov, R.N. Kyutt, S.V. Ivanov, T. Paskova, E. Valcheva and B. Monemar, Polarised photoluminescence spectroscopy of HVPE GaN with different dislocation structures, IPAP Conference Series CS1 (2000) p.595.
43. T. Paskova, S. Tungasmita, E. Valcheva, E.B. Svedberg, B. Arnaudov, S. Evtimova, P.O.Å. Persson, A. Henry, R. Beccard, M. Heuken and B. Monemar, Hydride vapour phase homoepitaxial growth of GaN on MOVPE-grown ‘templates’, Mat. Res. Soc. Symp. Proc. 595 (2000) p.W3.14., MRS Internet J. Nitride Semicond. Res. 5S1 (2000) W3.14.
42. E.M. Goldys, T. Paskova, J. Sheely, W. Schaff and L.F. Eastman, Cathodoluminescence study of nitride transistor structures – characterisation of native oxide, Proc. of the 2000 Conference on Optoelectronic and Microelectronic Materials and Devices, Eds. L.D. Broekman, B.F. Usher, J.D. Killey, Dec.6-8, 2000, Melbourne, Australia, p.133.
41. T. Paskova, E. Valcheva, S. Evtimova, S. Tungasmita, J. Birch, P.O.Å. Persson and B. Monemar, Effect of high temperature AlN buffer on structural and electrical properties of HVPE-GaN films, Proc. of the 11th IS on Condensed Matter Physics, Sept. 4-8, 2000, Varna, Bulgaria, p.356.
40. D. Florescu, F.H. Pollak, T. Paskova, E. Valcheva and B. Monemar, Dislocation/grain boundary effects on the thermal conductivity of hydride vapor phase epitaxy grown GaN/sapphire (0001), Proc. of the 27th IS on Compound Semiconductors, Oct. 2-5, 2000, Hyatt Monterey, CA, p.467.
1999:
39. T. Paskova, E.M. Goldys and B. Monemar, Hydride vapour phase epitaxy growth and cathodoluminescence characterisation of thick GaN films, J. Crystal Growth 203 (1999) 1.
38. E. Valcheva, T. Paskova, I.G. Ivanov, R. Yakimova, Q. Wahab, S. Savage, N. Nordell and C.I. Harris, B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high temperature annealing, J. Vac. Sci. & Technol.B 17 (1999) 1040.
37. B. Arnaudov, T. Paskova, E.M. Goldys, R. Yakimova, S. Evtimova I.G. Ivanov, A. Henry, and B. Monemar, Contribution of free electron recombination to the luminescence spectra of thick GaN films grown by hydride vapour phase epitaxy, J. Appl. Phys. 85 (1999) 7888.
36. G. Pozina, J.P. Bergman, T. Paskova and B. Monemar, Bound exciton dynamics in GaN grown by hydride vapour phase epitaxy, Appl. Phys. Lett. 75 (1999) 4124.
35. T. Paskova, E.M. Goldys, R. Yakimova, E.B. Svedberg, A. Henry and B. Monemar, Influence of growth rate on the structure of thick GaN layers grown by HVPE, J. Crystal Growth 208 (1999) 18.
34. T. Paskova, E.B. Svedberg, A. Henry, I.G. Ivanov, R. Yakimova and B. Monemar, Thick GaN layers grown on a-plane sapphire substrates by hydride vapour phase epitaxy, Physica Scripta T79 (1999) 67.
33. T. Paskova, J. Birch, S. Tungasmita, R. Beccard, M. Heuken, P. Runesson, E.M. Goldys and B. Monemar, Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers, Phys. Stat. Sol. (a) 176 (1999) 415.
32. G. Pozina, J.P. Bergman, T. Paskova and B. Monemar, Dynamics of the bound excitons in GaN epilayers grown by hydride vapour phase epitaxy, Phys. Stat. Sol. (b) 216 (1999) 45.
31. T. Paskova, E.B. Svedberg, L.D. Madsen, R. Yakimova, I.G. Ivanov, A. Henry and B. Monemar, Domain structure of thick GaN layers grown by hydride vapour phase epitaxy, Mat. Res. Soc. Symp. Proc. 537 (1999) p.G3.16., MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G3.16.
30. B. Monemar, J.P. Bergman, G. Pozina, I.A. Buyanova, W.M. Chen, Mt. Wagner and T. Paskova, Defects in Gallium Nitride, Proc. of the 3rd IW on Materials Science (IWOMS’99), Nov. 2-4, 1999, Hanoi, Vietnam, p.28.
1998:
29. E.M. Goldys, T. Paskova, I.G. Ivanov, B. Arnaudov and B. Monemar, Direct observation of large-scale nonuniformities in hydride vapour-phase epitaxy grown gallium nitride by cathodoluminescence, Appl. Phys. Lett. 73 (1998) 3583.
28. V. Dimitrova, D. Manova, T. Paskova, Tz. Uzunov, N. Ivanov and D. Dechev, Aluminium nitrtide thin films deposited by DC reactive magnetron sputtering, Vacuum 51 (1998) 161.
27. T. Paskova, E. Valcheva, I.G. Ivanov, R. Yakimova, Q. Wahab, S. Savage, N. Nordell and C.I. Harris, 6H-SiC crystalline behaviour upon B implantation studied by Raman scattering, Mat. Sci. Forum 264-268 (1998) p.741.
26. E. Valcheva, T. Paskova, I.G. Ivanov, R. Yakimova, Q. Wahab, S. Savage, N. Nordell and C.I. Harris, Electrical activation of B implant in 6H-SiC, Mat. Sci. Forum 264-268 (1998) p.705.
25. E. Valcheva, T. Paskova, E.P. Trifonova and R. Yakimova, Influence of the surface morphology of MOVPE grown GaAs:Sb on the electrical characteristics of Schottky diodes, Annul. L’Univ. Sofia “St.Kl.Ohridski” 88 (1998) 119.
24. E. Valcheva, T. Paskova, I.G. Ivanov and R. Yakimova, B-Implanted 6H-SiC: structural and electrical properties characterization, Proc. of the 17th Bulgarian-Greek Symposium on Semiconductor and Solid State Physics, June 7-9, 1997, Sofia, Bulgaria, “Semiconductor Physics and Technology’17” (Heron press, 1998, Sofia), p.64.
1997:
23. A. Kakanakova-Georgieva, T. Paskova, R. Yakimova, C. Hallin, E. Trifonova, M. Surtchev and E. Janzen, Structural properties of 6H-SiC epilayers grown by two different techniques, Mater. Sci. & Engineering B46 (1997) 345.
22. E. Valcheva, T. Paskova, O. Kordina, R. Yakimova and E. Janzen, Dimension related effects on the structure perfection in Si/SiC multilayer structures, NATO ASI Series 42, ed. M. Balkanski. (Kluwer Academic Publisher, Dordrech, 1997), p.59.
21. T. Paskova, E. Valcheva, O. Kordina, M. Surtchev, R. Yakimova and E. Janzen, CVD grown Si/SiC based multilayer structures, Proc. of the 9th ISCMP “Future directions in thin film science and technology”, Sept. 9-13, 1996, Varna, Bulgaria, (Eds. J.M. Marshal, N. Kirov, A. Vavrek, J.M. Maud, World Scientific, Singapore, 1997), p.377.
1996:
20. T. Paskova, E. Valcheva and R. Yakimova, Antimony doped GaAs: Role of the isoelectronic dopant in defect evolution, J. Vac. Sci. & Technol. B 14 (1996) 1729.
19. E. Valcheva, T. Paskova and R. Yakimova, Antimony doped GaAs: Model of dominant current transport mechanism, J. Vac. Sci. & Technol. B 14 (1996) 3582.
18. L. Hitova, E.P. Trifonova, T. Paskova and R. Yakimova, Structural defects in GaAs after microhardness measurements, Proc. of the IC “Electronics’96”, Oct. 10-11, 1996, Botevgrad, Bulgaria, p.34 (in Bulgarian).
1995:
17. R. Yakimova, T. Paskova and E.P. Trifonova, On the morphology of Sb-doped GaAs layers grown by MOVPE, Thin Solid Films 265 (1995) 123.
16. E.P. Trifonova, T. Paskova, R. Yakimova, A. Hadjiiski and L. Hitova, Microhardness depth profiles in MOVPE layers of GaAs doped with Sb, Proc. of the 16th Greek-Bulgarian Symposium on Semiconductor Physics, Oct. 16-20, 1995, Thessaloniki, Greece, p.69.
1994:
15. R. Yakimova, B. Arnaudov, S. Evtimova and T. Paskova, Electrical transport in Sb-doped metalorganic epitaxial GaAs grown at moderately As-rich conditions, J. Appl. Phys. 76 (1994) 3566.
14. R. Yakimova, T. Paskova, S. Evtimova and B. Arnaudov, Influence of isoelectronic doping with Sb on electrical properties of MOVPE-GaAs, Annul. L’Univ. Sofia “St.Kl.Ohridski” 86 (1994) 35.
13. T. Paskova, E. Valcheva, R. Yakimova and I. Ivanov, Correlation between structural and electrical properties of isoelectronically doped GaAs:Sb grown by MOVPE, Supplement of Balkan Physics Letters 2 (pt.1) 1994, p.375.
12. E. Valcheva, T. Paskova and R. Yakimova,Electrical properties of Schottky contacts based on MOVPE grown GaAs:Sb thin films, Proc. of the 8th ISCMP “Electronic, Optoelectronic and Magnetic Thin Films Science and Technology, Sept. 18-23, 1994, Varna, Bulgaria, p.612.
1993:
11. T. Paskova, R. Yakimova, E. Valcheva and K. Germanova, Characterization of MOVPE grown GaAs by C-V analysis, Appl. Phys. A 56 (1993) 69.
10. R. Yakimova, T. Paskova, I. Ivanov, K. Germanova and M. Peev, Raman scattering study of MOVPE grown GaAs, Semicond. Sci. & Technol. 8 (1993) 179.
9. R. Yakimova, T. Paskova and I. Ivanov, Layer quality of Sb-doped GaAs grown by MOVPE, J. Crystal Growth 129 (1993) 143.
8. R. Yakimova, T. Paskova and C. Hardalov, Behaviour of EL5-like defect with Sb doping in MOVPE-GaAs, J. Appl. Phys. 74 (1993) 6170.
7. T. Paskova and R. Yakimova, Effect of Sb doping on point defect ensemble in MOVPE-GaAs, Solid State Commun. 87 (1993) 1125.
6. R. Yakimova, B. Arnaudov, S. Evtimova and T. Paskova, Vacancy related electron scattering in MOVPE GaAs:Sb, Proc. of the 14th Greek-Bulgarian Symposium on Semiconductor Physics, Oct. 4-8, 1993, Thessaloniki, Greece, p.171.
1992:
5. R. Yakimova, T. Paskova, D. Gogova and A. Vutzova, MOVPE of GaAs layers for electronic devices, Crystal Properties and Preparation 32-34 (1992) 526.
4. R. Yakimova, T. Paskova and L. Vasilev, Optical spectroscopy of GaAs layers grown by MOVPE, Key Engineering Materials 65 (1992) 35.
1988:
3. A. Apostolov, R. Yakimova and T. Paskova, Metalorganic vapour phase epitaxy of semiconductor materials, Proc. of the 1st International Seminar on Modern Epitaxial Technologies, Nov. 1-3, 1988, Plovdiv, Bulgaria, p.5.
1987:
2. K. Nedev, I. Stoinev and T. Paskova, Biological modification of semiconductor devices, Proc. of the 4th IC on Automatic and Scientific Instrumentation, Sept. 14-19, 1987, Varna, Bulgaria, p.233.
1986:
1. M. Borisov, K. Germanova, C. Hardalov and T. Tosheva (Paskova), Surface space-charge layers analysis in semi-insulating GaAs containing deep levels, Appl. Phys. A 40 (1986) 219.