Funding Source: SPAWAR ESTEP program funded by ONR/Navy
Objective: Development and design on a Medium Voltage Solid State Transformer using 10 kV SiC MOSFETs
Summary: With the increasing maturity of Silicon Carbide (SiC) semiconductor devices at medium voltage (MV) level, high switching frequencies and low conduction losses in MV applications is possible. Higher switching frequency operation enables the reduction in size and weight of transformers. In an application such as MV-MV or MV-LV grid-interconnection, a solid state transformer offers a multitude of advantages compared to conventional transformers. A reduction in size and weight, in addition to having active and reactive power flow control have made SSTs a lucrative replacement to conventional low frequency (LF) transformers. Lower conduction losses exhibited by SiC devices (as compared to their silicon counterparts) have made it possible to achieve similar efficiencies as compared to conventional LF transformers. This project aims at designing and developing a MV MUSE-SST topology used for grid interconnection.