Ashish Kumar is currently a PhD candidate in FREEDM Systems Centers at North Carolina State University. He completed his B.Tech. in Electrical Engineering from Indian Institute of Technology, Kharagpur, India in 2008, and M.Sc. (Engg.) in EE from Indian Institute of Science, Bangalore, India in 2014. He has worked with Center for Nano Science and Engineering, IISc Bangalore as project assistant on development of GaN MOSFEs. At FREEDM center, he is actively involved in designing device structure and process flow of high voltage SiC MOSFETs, JFETs and IGBTs, and their compatible gate drivers. His research interest includes high voltage SiC power devices, gate drivers, high bandwidth current sensing techniques, modern current control techniques and medium voltage power converters.