Teaching - Computational semiconductor physics

Course/Call numbers: ECEN 4010.377/19213, ECEN 4010.803/19218, ECEN 5060.380/19214, ECEN 5060.802/19219

Technology based class-offered in OSU Tulsa and televised via compressed video.

Class meeting: TR 2:00-3:30 pm

Office hours: TR: 3:30-5:00 pm

Instructor: Dr. Daryoosh Vashaee

Contact: (918) 459-8017; daryoosh.vashaee@okstate.edu

Text:

M. Lundstrom, Fundamentals of Carrier Transport, 2nd Edition, 2000.

Other References:

(1) C.M. Snowden, Introduction to Semiconductor Device Modeling, 1987; (2) C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, 1990; (3) B M Askerov, Electron Transport Phenomena in Semiconductors, 1994; (4) S. Selberherr, Analysis and Simulation of Semiconductor Devices, 1984; (5) R.W. Hockney and J.W. Eastwood, Computer Simulation Using Particles, 1988.

Course Description: We will review the semiconductor physics and then focus on semi-classical transport theory in semiconductors. We will then study the particle based simulation methods. We continue with techniques such as the numerical methods for the solution of field equations, and moment methods for transport. Finally we will cover several advanced topics related to small scale electronic devices.

Audience:

This course is recommended to senior undergraduate and graduate students in the area of semiconductors, as well as anyone interested in the physics of semi-classical electron transport.

Prerequisite:

Basic Quantum Mechanics, Background in matrix algebra including familiarity with a mathematical software package such as MATLAB.

Grading Procedure:

Homework (30%) + Midterm (20%) + Quiz (10%) + Final(40%)

Please review the OSU Administrative Regulations and Student Policies as found in the OSU Catalog.

Anyone who has any disability or need which requires special attention should make this known

to both myself and the ECEN Department.

Topics Covered:

Review of Semiconductor Physics, Boltzmann Transport Equation, Scattering Mechanisms, Monte Carlo Methods for Solution of BTE, Field-Equations-Numerical Solution Methods, Advanced Iterative Methods, Drift-Diffusion and Hydrodynamic Equations, Advanced Topics: heterojunction devices, many-body effects (molecular dynamics), discrete impurities, coupled Schrödinger-Poisson solvers.

Course materials:

Transport models

Zinc blende crystal

Handout 1

Handout 2

Handout 3

Homeworks:

HW1

HW2

HW3

HW4

HW5

HW6

HW7

HW8